| No. | Partie # | Fabricant | Description | Fiche Technique |
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HAOHAI |
N-Channel MOSFET ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A2SHB Case Material: Molded Plastic. UL Flammability Classification Rat |
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Excelliance MOS |
N-Channel MOSFET J W W °C MAXIMUM 6 50 UNIT °C / W p.1 EMB20N03V ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC CHIPSET-IC.COM Drain‐Source Breakdown Voltage Gate Threshold |
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REACTOR |
Single channel constant current LED control chip |
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Bruckewell |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● P |
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WELLKING TECHNOLOGIES |
4.8W single channel Class-F audio power amplifier 89509090 MIX2018 4.8W F （ESOP8） WELLKING TECHNOLOGIES CO.,LTD 4/4 TEL:0755-83611411 FAX:0755-89509090 |
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Toshiba |
N-Channel MOSFET nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating |
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Rectron |
P-Channel Enhancement Mode Power MOSFET VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power manage |
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INCHANGE |
N-Channel MOSFET Transistor ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters |
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LTKCHIP TECHNOLOGY |
Dual Channel Class D Audio Amplifier |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th |
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Sanyo |
2-CHANNEL AF POWER AMPLIFIER |
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Huajing |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherw |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.5mΩType4mΩ) l High Power and Current Handing Capability l Low Reverse transfer Capacitances(Typical:480pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ |
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HOOYI |
N-Channel MOSFET • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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GOOD-ARK |
75V N-Channel MOSFET and Benefits TO-220 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperat |
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powerforest |
Single Channel WLED Driver Wide Input Range: 9V to 30V Current Mode Control 300mV Feedback Reference Short LED Protection Over Current Protection Over Temperature Protection Output Over Voltage Protection PWM Dimming Input 1000mA/-1500mA Output Driving Capabi |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 0 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5.6A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.5A I |
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Alpha & Omega Semiconductors |
30V N-Channel MOSFET TSTG Maximum 30 ±20 85 66 322 51 41 60 90 36 83 33 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Ty |
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Alpha & Omega Semiconductors |
N-Channel MOSFET The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (V |
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