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eupec GmbH |
IGBT stor /transistor VCES IC ICRM Ptot VGE IF IFRM VISOL FS 300 R 12 KF4 1200 V 300 A 600 A 2000 W +/- 20 V 300 A 600 A 2,5 kV min. typ. 2,7 3,3 5,5 22 0,35 0,45 0,9 1,0 0,10 0,15 max. 3,2 V 3,9 V 6,5 V - nF 5 mA 50 mA 400 nA 400 nA - µs - µs - µs - µs |
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Eupec |
IGBT voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (resistive load) tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. iC=300A,v GE=15V, t vj=25°C iC=300A,v GE=15V, t |
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Eupec |
IGBT GE IF IFRM VISOL min. 4,5 typ. 2,7 3,3 5,5 90 16 100 0,7 0,8 0,9 1,0 0,10 0,15 170 190 1200 1200 2400 7800 ± 20 1200 2400 2,5 max. 3,2 3,9 6,5 200 400 400 V A A W V A A kV tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. Char |
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Eupec |
IGBT |
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eupec |
IGBT J + +A- ' X/( +: A43 ' / N: $%& ' ()* +A- ' X/( +: A43 ' / N: $%& ' / ()* 2, ' ( 6: +,- ' J + +A- ' X/( +: A43 ' / N: $%& ' ()* +A- ' X/( +: A43 ' / N: $%& ' / ()* 6 S 6 8T# # 8 " U 8 U " U V W W # # V W W 2, ' ( 6: +,- ' J + +A- ' X/( +: A4Z |
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Eupec |
IGBT |
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eupec GmbH |
IGBT-inverter 0 ! $ 9T$ U $ 9 U V W V W $ 9 U U W W ,-. ( )2 7 7 K K K K K K K K [ [ [ [ ,2 %&' ( )*+ , 3- ( 72 ,-. ( H ,@. ( X0) , @54 ( 02 N 3- ( 72 ,-. ( H ,@. ( X0) , @54 ( 02 N 7 $ 9 U U ! , S 7 9T$ V W W 3- ( 72 ,-. ( H ,@. ( X0) , @5ZZ ( 02 N |
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eupec GmbH |
IGBT 200 400 800 2700 ± 20 400 800 2,5 max. 3,2 3,9 6,5 400 400 V A A W V A A kV tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung Gat |
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eupec |
IGBT (:0 N: $%& ' ()* +A- ' X ( +: A32 ' (:0 N: $%& ' ()* 1, ' 6: +,- ' 0 + +A- ' X ( +: A32 ' (:0 N: $%& ' ()* +A- ' X ( +: A32 ' (:0 N: $%& ' ()* 6 S 6 8T# # 8 " U 8 U " U V W W # # V W W 1, ' 6: +,- ' 0 + +A- ' X ( +: A3ZZ ' (:0 N: $%& ' ()* +A |
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eupec |
IGBT ,- ' 1 + +B- ' X/( +; B43 ' 6;( N; $%& ' ()* +B- ' X/( +; B43 ' 6;( N; $%& ' / ()* 2, ' 6( 7; +,- ' 1 + +B- ' X/( +; B43 ' 6;( N; $%& ' ()* +B- ' X/( +; B43 ' 6;( N; $%& ' / ()* 7 S 7 9T# # 9 " U 9 U " U V W W # # V W W 2, ' 6( 7; +,- ' 1 + +B |
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eupec GmbH |
IGBT . current insulation test voltage collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) tp=1 ms VCES IC ICRM Ptot VGE FF 6 |
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eupec GmbH |
IGBT Modules 3,4 kV min. typ. 3,3 4,4 5,5 130 6 60 0,8 1 1,1 1,3 0,25 0,3 max. 3,7 V 4,8 V 6,5 V - nF - mA - mA 400 nA 400 nA - µs - µs - µs - µs - µs - µs Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung Gate-Sch |
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Eupec GmbH |
IGBT current repetitive peak forw. current insulation test voltage collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) tp=1ms |
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