| No. | Partie # | Fabricant | Description | Fiche Technique |
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Zowie Technology |
General Purpose Transistor |
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Zowie Technology |
General Purpose Transistor |
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Zowie Technology |
General Purpose Transistor ter-Base Breakdowe Voltage ( IE=10 uAdc, IC=0 ) Base Cutoff Current ( VCE=30 Vdc, VEB=3.0 Vdc ) Collector Cutoff Current ( VCE=30 Vdc, VEB=3.0 Vdc ) V(BR)CBO V(BR)EBO IBL ICEX Min. 40 60 6.0 - Max. 50 50 Unit Vdc Vdc Vdc nAdc nAdc 2010/12 Zowie |
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Zowie Technology |
High Voltage Transistors ƽ We declare that the material of product compliance with RoHS requirements. MMBT5550GH MMBT5551GH MAXIMUM RATINGS Rating Collector –Emitter Voltage Collector –Base Voltage Symbol V CEO V CBO Emitter –Base Voltage V EBO Collector Current — Continu |
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Zowie Technology |
General Purpose Transistor |
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Zowie Technology |
General Purpose Transistor ) Emitter-Base Breakdowe Voltage ( IE= -10 uAdc, IC=0 ) Base Cutoff Current ( VCE= -30 Vdc, VEB= -3.0 Vdc ) Collector Cutoff Current ( VCE= -30 Vdc, VEB= -3.0 Vdc ) V(BR)CBO V(BR)EBO IBL ICEX Min. -40 -40 -5.0 - Max. -50 -50 Unit Vdc Vdc Vdc nAdc |
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Zowie Technology Corporation |
MONOLITHIC DUAL SWITCHING DIODE ) IR 0.1 uAdc - Diode Capacitance ( VR=0, f=1.0MHZ ) CJ - 4.0 pF Reverse Recovery Time ( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 ) trr - 4.0 nS (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. |
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Zowie Technology |
Monolithic Dual Switching Diode HARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE ) Characteristic Symbol Min Max OFF CHARACTERISTICS Reverse Breakdown Voltage(I R = 100 µAdc) LMBD2835LT1G V (BR) 35 — LMBD2836LT1G 75 — Reverse Voltage Leakage Current (V R = |
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Zowie Technology |
High Voltage Transistors ƽ We declare that the material of product compliance with RoHS requirements. MMBT5550GH MMBT5551GH MAXIMUM RATINGS Rating Collector –Emitter Voltage Collector –Base Voltage Symbol V CEO V CBO Emitter –Base Voltage V EBO Collector Current — Continu |
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