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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 100 Volt VDS * RDS(on)=8Ω 7 ZVP2110G D COMPLEMENTARY TYPE ZVN2110G PARTMARKING DETAIL ZVP2110 G D S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Powe |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=14Ω ZVP3306A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Ra |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=14Ω ZVP3306A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Ra |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 200 Volt VDS * RDS(on)=25Ω ZVP2120A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature R |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 200 Volt VDS * RDS(on)=25Ω PARTMARKING DETAIL COMPLEMENTARY TYPE 7 ZVP2120G D ZVP2120 ZVN2120G G S D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Pow |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=5Ω ZVP2106C G D REFER TO ZVP2106A FOR GRAPHS S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operati |
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Zetex Semiconductors |
250V P-CHANNEL ENHANCEMENT MODE MOSFET • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • Complementary P-channel Type ZVN4525G • SOT223 package APPLICATIONS • Earth Recall and dialling switches • Electronic hook switches • High Voltage Po |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 200 Volt VDS * RDS(on)=32Ω ZVP0120A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature R |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 350 Volt VDS * RDS(on)=100Ω ZVP0535A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 400 Volt VDS * RDS(on)=150Ω ZVP0540A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 450 Volt VDS * RDS(on)=150Ω ZVP0545A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 450 Volt VDS * RDS(on)=150Ω ZVP0545G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperatu |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 200 Volt VDS * RDS(on)=80Ω ZVP1320A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature R |
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Zetex Semiconductors |
P-Channel MOSFET * VDS - 200V 7 ZVP1320F D S PARTMARKING DETAIL - MT G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Te |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=5Ω ZVP2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=5Ω PARTMARKING DETAIL: COMPLEMENTARY TYPE: ZVP2106 ZVN2106G ZVP2106G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Diss |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 100 Volt VDS * RDS(on)=8Ω ZVP2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 100 Volt VDS * RDS(on)=8Ω ZVP2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 100 Volt VDS * RDS(on)=8Ω ZVP2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating |
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Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=14Ω ZVP3306A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Ra |
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