| No. | Partie # | Fabricant | Description | Fiche Technique |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 100 Volt VDS * RDS(on)= 4Ω ZVN2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating |
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Zetex Semiconductors |
N-Channel MOSFET * 60 Volt VDS * RDSon)=5Ω ZVN3306A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating an |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 450 Volts VDS * RDS(on)= 50Ω * Ease of paralleling 7 ZVN0545G D S PARTMARKING DETAIL – ZVN0545 G D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dis |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 90 Volt VDS * Low input capacitance * Fast switching ZVN1409A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25 |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 200 Volt VDS * RDS(on)= 10Ω ZVN2120A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operatin |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * VDS - 200V * RDS(ON) - 10Ω 7 ZVN2120G D PARTMARKING DETAIL - ZVN2120 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 350 Volt VDS RDS(on)=35Ω ZVN2535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET * VDS - 200V * RDS(ON) - 10Ω 7 ZVNL120G D PARTMARKING DETAIL - ZVNL120 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 350 Volt VDS * RDS(on)=40Ω ZVNL535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 240 Volt VDS * RDS(on)=16Ω APPLICATIONS * Telephone handsets ZVN0124A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power D |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on)=2Ω ZVN2106G D S COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP2106G ZVN2106 G D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissi |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 350 Volt VDS RDS(on)=35Ω ZVN2535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating a |
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Zetex Semiconductors |
N-Channel MOSFET * RDS(on)= 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP3306F MC ZVN3306F S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipatio |
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Zetex Semiconductors |
N-Channel MOSFET * 100 Volt VDS * RDS(on)= 10Ω ZVN3310A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operatin |
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Zetex Semiconductors |
N-Channel MOSFET * 200 Volt VDS * RDS(on)= 25Ω 7 ZVN3320F S D G PARTMARKING DETAIL – MU ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Oper |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * 60 Volt VDS * RDS(on) = 1 Ω ZVN4206A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating and Storage Temperatu |
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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * Compact geometry * Fast switching speeds * No secondary breakdown and Excellent temperature stability * High input impedance and low current drive * Ease of parralleling ZVN4206G D S D G APPLICATIONS * DC-DC converters * Solenoid / relay drivers |
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