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Zetex Semiconductors |
Surface mounted culmulative tolerance on tape ±0.2mm (±0.008”) D P2 E See Note 1 A0 See Note 1 F W B1 K0 See Note 1 B0 P Embossment Center lines of cavity D1 User direction of feed Dimensions mm (inches) A0, B0, K0 B1 (max.) D D1 (max.) E F P Tape size |
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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR * 40 Volt VCEO * Fast switching COMPLEMENTARY TYPE PARTMARKING DETAIL FZT2907A FZT2222A FZT2222A C E C B SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 75 40 5 600 2 -55 to+150 UNIT V V V 10 10 10 10 0.3 1.0 nA nA nA V V V V CONDITIONS. IC=10µA, IE=0 I |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT23 SILICON VARIABLE CAPACITANCE DIODES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) ZC830/A/B to ZC836/A/B 1 1 3 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Forward Current Power Dissipation at T |
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Zetex Semiconductors |
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR * High VCEO and Low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:BFN36 PARTMARKING DETAIL:BFN37 BFN37 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltag |
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Zetex Semiconductors |
20V Dual SOT23-6 N-channel enhancement mode MOSFET low on-resistance achievable with low gate drive. Features • • • Low on-resistance Low gate drive capability SOT23-6 (dual) package Applications • • • Power Management functions Disconnect switches Relay driving and load switching www.DataSheet4 |
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Zetex Semiconductors |
20V SOT23 N-channel MOSFET low onresistance achievable with low (2.5V) gate drive. Features • Low on-resistance • 2.5V gate drive capability • SOT23 package Applications • Buck/Boost DC-DC Converters • Load switching and SMPS • Charging applications in portable equipment • Mo |
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Zetex Semiconductors |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR 0.15 0.10 2.50 Inches Min 0.105 0.047 0.0145 0.0033 0.0004 0.0825 Max 0.120 0.055 0.043 0.021 0.0059 0.004 0.0985 1 3 2 B C D F G K L N NOM 1.9 NOM 0.075 NOM 0.95 NOM 0.37 Package Details Zetex plc. Fields New Road, Chadderton, Oldham, OL9 |
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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS NIT CONDITIONS V V V IC=1mA, IB=0 IC=0.1mA, IE=0 IE=0.1mA, IC=0 VEB(off) =0.4V VEB(off) =3V µA VCE=35V µA VCE=35V 150 0.4 0.75 300 0.4 0.75 V V V V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* IC=150mA,IB=15 |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES 1 1 1 1 1 1 2 2 2 4 4 5 5 Max. 100 100 100 100 100 90 80 60 40 10 15 15 15 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Type BZX84: C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5V1 C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 C10 C11 C12 C13 C13V6 C15 C16 C18 C20 C22 C24 |
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