| No. | Partie # | Fabricant | Description | Fiche Technique |
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Zetex Semiconductors |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR 0.15 0.10 2.50 Inches Min 0.105 0.047 0.0145 0.0033 0.0004 0.0825 Max 0.120 0.055 0.043 0.021 0.0059 0.004 0.0985 1 3 2 B C D F G K L N NOM 1.9 NOM 0.075 NOM 0.95 NOM 0.37 Package Details Zetex plc. Fields New Road, Chadderton, Oldham, OL9 |
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Zetex Semiconductors |
NPN SILICON PLANAR AVALANCHE TRANSISTOR * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417 FMMT415 FMMT4 |
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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS NIT CONDITIONS V V V IC=1mA, IB=0 IC=0.1mA, IE=0 IE=0.1mA, IC=0 VEB(off) =0.4V VEB(off) =3V µA VCE=35V µA VCE=35V 150 0.4 0.75 300 0.4 0.75 V V V V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* IC=150mA,IB=15 |
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Zetex Semiconductors |
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558 FMMT558 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Pea |
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Zetex Semiconductors |
PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL617 L77 FMMTL717 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous |
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Zetex Semiconductors |
SILICON PLANAR VARIABLE CAPACITANCE DIODE |
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Zetex Semiconductors |
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE |
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Zetex Semiconductors |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR quency Output Capacitance Input Capacitance Noise Figure hFE fT Cobo Cibo N 120 360 60 IC=-2mA, VCE=-1V* IC=-50mA, VCE=-1V* 250 MHz IC=-10mA, VCE=-20V, f=100MHz 4.5 pF VCB=-5V, IE=0, f=140KHz 10 pF VBE=-0.5V, IE=0, f=140KHz 4 dB IC=-200µA, VC |
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Zetex Semiconductors |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS – FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J FMMT38A FMMT38B FMMT38C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak P |
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Zetex Semiconductors |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS – FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J FMMT38A FMMT38B FMMT38C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak P |
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Zetex Semiconductors |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS A, VCE=-1V* V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* -40 -40 -5 MAX MIN 150 300 Saturation Voltages VCE(sat) VBE(sat) -0.25 -0.4 0.25 0.4 -0.65 -0.85 -0.65 -0.85 V -0.95 -0.95 V 200 4.5 10 5 250 4.5 10 4 |
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Zetex Semiconductors |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS A, VCE=-1V* V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* -40 -40 -5 MAX MIN 150 300 Saturation Voltages VCE(sat) VBE(sat) -0.25 -0.4 0.25 0.4 -0.65 -0.85 -0.65 -0.85 V -0.95 -0.95 V 200 4.5 10 5 250 4.5 10 4 |
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Zetex Semiconductors |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR 0 CONDITIONS. IC=-10µA IC=-1mA* IE=-10µA VCB=-20V VEB=-3V IC=-50mA, IB=-5mA* IC=-50mA, IB=-5mA* IC=-2mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-10mA, VCE=-20V, f=100MHz VCB=-5V, IE=0, f=140KHz VBE=-0.5V, IE=0, f=140KHz IC=-200µA, VCE=-5V, Rg=-2kΩ f=30Hz to |
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Zetex Semiconductors |
NPN SILICON PLANAR AVALANCHE TRANSISTOR * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL - 413 FMMT413 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAM |
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Zetex Semiconductors |
NPN SILICON PLANAR AVALANCHE TRANSISTOR * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417 FMMT415 FMMT4 |
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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS NIT CONDITIONS V V V IC=1mA, IB=0 IC=0.1mA, IE=0 IE=0.1mA, IC=0 VEB(off) =0.4V VEB(off) =3V µA VCE=35V µA VCE=35V 150 0.4 0.75 300 0.4 0.75 V V V V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* IC=150mA,IB=15 |
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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS NIT CONDITIONS V V V IC=1mA, IB=0 IC=0.1mA, IE=0 IE=0.1mA, IC=0 VEB(off) =0.4V VEB(off) =3V µA VCE=35V µA VCE=35V 150 0.4 0.75 300 0.4 0.75 V V V V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* IC=150mA,IB=15 |
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Zetex Semiconductors |
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS , VCE=-5V IC=-50mA, VCE=-5V V V V V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA -50 -50 50 60 50 240 -0.2 -0.5 -1.0 -1.0 100 300 6.0 40 260 8 Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Bas |
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Zetex Semiconductors |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR * hFE up to 5k at Ic= 500mA * Fast switching * Low VCE(sat) at High Ic PARTMARKING DETAILS 614 FMMT614 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous |
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Zetex Semiconductors |
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 3.0A IC=1.5A Continuous Collector Current SOT23 package SOT23 APPLICATIONS DC - DC Modules Power Management Functions CCFL Backlightin |
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