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Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at |
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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR =4mA, IB=400µ A IC=50mA, IB=15mA IC=4mA, IB=400µ A IC=1mA, VCE=-1V IC=10mA, VCE=1V IC=20mA, VCE=1V VCE=10V, IC=4mA f=35 MHz VCB=10V, f=1MHz µA nA mV mV mV 20 Transition Frequency fT 60 Typ. 3 Output Capacitance Cobo 5 pF * Measured under p |
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Zetex Semiconductors |
(BSS79B/C) SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR =150mA, VCE=10V IC= 150mA, VCE=10V Emitter-Base Breakdown Voltage V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo td tr ts tf BSS79B BSS79C MHz pF ns ns ns ns VCE=20V, IC=20mA f=100MHz VCB=10V, f=1MHz VCC=30V, IC=150mA IB1=IB2=15mA VCC=30V, IC=150mA IB1= |
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Zetex Semiconductors |
(BSS79B/C) SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR =150mA, VCE=10V IC= 150mA, VCE=10V Emitter-Base Breakdown Voltage V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo td tr ts tf BSS79B BSS79C MHz pF ns ns ns ns VCE=20V, IC=20mA f=100MHz VCB=10V, f=1MHz VCC=30V, IC=150mA IB1=IB2=15mA VCC=30V, IC=150mA IB1= |
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Zetex Semiconductors |
(BSS80B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS 10mA µA nA VCB=-50V, VCB=-50V, Ta=150oC VBE=-3V IC=-150mA,VCE=-10V IC=-150mA,VCE=-10V IC=150mA,VCE=10V IC=150mA,VCE=10V nA mV V -0.4 -1.6 120 300 MHz pF ns ns ns ns VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz VCC=-30V, IC=-150mA IB1=-IB2=-15mA |
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Zetex Semiconductors |
(BSS80B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS 10mA µA nA VCB=-50V, VCB=-50V, Ta=150oC VBE=-3V IC=-150mA,VCE=-10V IC=-150mA,VCE=-10V IC=150mA,VCE=10V IC=150mA,VCE=10V nA mV V -0.4 -1.6 120 300 MHz pF ns ns ns ns VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz VCC=-30V, IC=-150mA IB1=-IB2=-15mA |
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Zetex Semiconductors |
(BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS Time MAX. UNIT V V CONDITIONS. IC=-10µ A IC=-10mA* IE=-10µ A nA VCB=-50V, VCB=-50V, Tamb=150 °C VBE=-3V IC=-150mA,IB=-15mA* IC=-500mA,IB=50mA* IC=150mA,VCE=10V IC=150mA,VCE=10V VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz nA V V Rise Time Storag |
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Zetex Semiconductors |
(BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS Time MAX. UNIT V V CONDITIONS. IC=-10µ A IC=-10mA* IE=-10µ A nA VCB=-50V, VCB=-50V, Tamb=150 °C VBE=-3V IC=-150mA,IB=-15mA* IC=-500mA,IB=50mA* IC=150mA,VCE=10V IC=150mA,VCE=10V VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz nA V V Rise Time Storag |
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