| No. | Partie # | Fabricant | Description | Fiche Technique |
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Zetex Semiconductors |
(BSP40 / BSP42) SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS CM IC IB Ptot Tj:Tstg MAX. UNIT V V V V V µA BSP40 70 60 5 2 1 100 2 BSP42 90 80 UNIT V V V A A mA W °C -55 to +150 CONDITIONS. IC=100µA IC=100µA IC=10mA IC=10mA IE=10µA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). nA V |
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Zetex Semiconductors |
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR * High VCEO * Low saturation voltage C BSP16 COMPLEMENTARY TYPE: BSP19 PARTMARKING DETAIL: BSP16 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Col |
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Zetex Semiconductors |
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR * High VCEO * Low saturation voltage BSP15 C COMPLEMENTARY TYPE: PARTMARKING DETAIL: BSP20 BSP15 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Co |
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Zetex Semiconductors |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR 1.0 1.2 120 12 90 100 250 1000 pF pF MHz ns ns MAX. UNIT V V V nA µA V V V V CONDITIONS. I C=100 µ A I C=10mA I E=10 µ A V CB=60V V CB=60V, T amb=125°C I C =150mA, I B=15mA I C =500mA, I B=50mA I C =150mA, I B=15mA I C =500mA, I B=50mA I C =100 µ A, |
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Zetex Semiconductors |
(BSP40 / BSP42) SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS CM IC IB Ptot Tj:Tstg MAX. UNIT V V V V V µA BSP40 70 60 5 2 1 100 2 BSP42 90 80 UNIT V V V A A mA W °C -55 to +150 CONDITIONS. IC=100µA IC=100µA IC=10mA IC=10mA IE=10µA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). nA V |
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