Zetex Semiconductors BCX fiche technique

No.	Partie #	Fabricant	Description
1	BCX38	Zetex Semiconductors	NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt BCX38A/B/C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation a
2	BCX38A	Zetex Semiconductors	NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt BCX38A/B/C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation a
3	BCX38C	Zetex Semiconductors	NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt BCX38A/B/C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation a
4	BCX38B	Zetex Semiconductors	NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt BCX38A/B/C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation a
5	BCX41	Zetex Semiconductors	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR VCE =1V * IC =200mA, VCE =1V * nA V V Static Forward hFE Current Transfer Ratio Transition Frequency Output Capacitance fT Cobo MHz IC =10mA, VCE =5V f =20MHz pF VCB =10V, IE=Ie=0, f =1MHz * Measured under pulsed conditions. Pulse width = 300µs.
6	BCX68	Zetex Semiconductors	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR * High gain and low saturation voltages COMPLEMENTARY TYPE – PARTMARKING DETAIL – BCX69 BCX68 – CE BCX68-16 – CC BCX68-25 – CD BCX68 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vo
7	BCX69	Zetex Semiconductors	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR * High gain and low saturation voltages COMPLEMENTARY TYPE – PARTMARKING DETAIL – BCX68 BCX69 – CJ BCX69-16 – CG BCX69-25 – CH BCX69 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vo
8	BCX70GR	Zetex Semiconductors	NPN Transistor
9	BCX70HR	Zetex Semiconductors	NPN Transistor
10	BCX70J	Zetex Semiconductors	NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR
11	BCX70	Zetex Semiconductors	NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR lloscope PAGE NO BCX70 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current V
12	BCX70KR	Zetex Semiconductors	NPN Transistor
13	BCX70JR	Zetex Semiconductors	NPN Transistor
14	BCX70K	Zetex Semiconductors	NPN Transistor
15	BCX70G	Zetex Semiconductors	NPN Transistor
16	BCX70H	Zetex Semiconductors	NPN Transistor