| No. | Partie # | Fabricant | Description | Fiche Technique |
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ZPSEMI |
N-Channel Power MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source |
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ZPSEMI |
N-Channel Power MOSFET z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJD044N60 z XXX CJD04N60 = Device code Solid dot = Green molding compound devi |
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ZPSEMI |
N-Channel Power MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251-3L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Sour |
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ZPSEMI |
N-Channel Power MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continu |
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ZPSEMI |
N-Channel Power MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source |
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ZPSEMI |
N-Channel Power MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251-3L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Sour |
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ZPSEMI |
N-Channel Power MOSFET z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized fo |
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ZPSEMI |
N-Channel Power MOSFET z Excellent package for good heat dissipation z High switching speed z 100% avalanche tested TO-251-3L 1. GATE 2. DRAIN 3. SOURCE APPLICATION z Power switching application z DC/DC converters Maximum ratings (Ta=25℃ unless otherwise noted) Paramet |
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ZPSEMI |
N-Channel Power MOSFET z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source |
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ZPSEMI |
N-Channel Power MOSFET z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Charact |
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ZPSEMI |
N-Channel Power MOSFET z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continu |
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