| No. | Partie # | Fabricant | Description | Fiche Technique |
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ZHONGGUI |
P-Channel MOSFET z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1 D 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source |
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