| No. | Partie # | Fabricant | Description | Fiche Technique |
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YZPST |
HIGH POWER THYRISTOR : - Blocking Capability up to 2800 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package ELECTRICAL CHARACTERISTICS AND RATINGS Blocking Parameter Repetitive peak reverse voltage Repeti |
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YZPST |
HIGH POWER THYRISTOR . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State |
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YZPST |
HIGH POWER THYRISTOR : - Blocking Capability up to 1600 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package ELECTRICAL CHARACTERISTICS AND RATINGS Blocking Parameter Symbol Min Max Typ Unit Conditions R |
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YZPST |
HIGH POWER THYRISTOR : - Blocking Capability up to 3600 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package ELECTRICAL CHARACTERISTICS AND RATINGS Blocking Parameter Repetitive peak reverse voltage Repeti |
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YZPST |
HIGH POWER THYRISTOR . All Diffused Structure . Spoke Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS CASE 6T Blocking - Off State Device Type VRRM (1) KP1800 |
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YZPST |
HIGH POWER THYRISTOR . All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to6500volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS CASE 5T Blocking - Off |
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YZPST |
HIGH POWER THYRISTOR . All Diffused Structure . Center Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM ( |
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YZPST |
HIGH POWER THYRISTOR : - Blocking Capability up to 2600 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package ELECTRICAL CHARACTERISTICS AND RATINGS Blocking Parameter Symbol Min Max Typ Unit Conditions R |
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YZPST |
HIGH POWER THYRISTOR : - Blocking Capability up to 1600 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package ELECTRICAL CHARACTERISTICS AND RATINGS Blocking Parameter Symbol Min Max Typ Unit Conditions R |
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YZPST |
HIGH POWER THYRISTOR . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State |
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