No. | Partie # | Fabricant | Description | Fiche Technique |
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Wolfspeed |
Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi |
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Wolfspeed |
Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi |
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Wolfspeed |
Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi |
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|
Wolfspeed |
Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi |
|
|
|
Wolfspeed |
Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching wi |
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|
|
Wolfspeed |
Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant • Automotive Quali |
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