| No. | Partie # | Fabricant | Description | Fiche Technique |
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Winsemi |
30V SO8 Complementary enhancementmode MOSFET H-Bridge low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features • • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D Applications • • N1G N2G DC Motor control DC-AC Inverters N1S/N2S |
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