Wing On PFP fiche technique

No.	Partie #	Fabricant	Description
1	PFP65R380	Wing On	N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET  New technology for high voltage device  Low RDS(ON) and low conduction losses  Small package BVDSS = 650 V   Ultra low gate charge cause lower driving requirement 100% avalanche tested RDS(on) = 0.35 Ω 
2	PFP730E	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Ty
3	PFP12N65E	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.48 Ω (Typ
4	PFP6N90	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ
5	PFP60R360	Wing On	N-Channel Super Junction MOSFET  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS APPLICATION  Power Factor Correction(PFC)  Switched mode power suppl
6	PFP830E	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.1 Ω (Ty
7	PFP7N60E	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ.
8	PFP10N60	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.78 Ω (Typ
9	PFP2N65	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 Ω (Typ
10	PFP6N70E	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ
11	PFP10N80A	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.15 Ω (T
12	PFP6N80	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.4 Ω (Ty
13	PFP7N80E	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.45 Ω (Typ
14	PFP10N80E	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 49.6 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.93 Ω (T
15	PFP110N10S	Wing On	N-Channel Super Junction MOSFET  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 6.5 mΩ (Typ.) @VGS=10V APPLICATION  DC Motor control for E-bike & Power t
16	PFP60R180	Wing On	N-Channel Super Junction MOSFET  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS APPLICATION  Power Factor Correction(PFC)  Switched mode power suppl
17	PFP100N10S	Wing On	N-Channel Super Junction MOSFET  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 7.2 mΩ (Typ.) @VGS=10V APPLICATION  DC Motor control for E-bike & Power t
18	PFP18N50	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.26 Ω (T
19	PFP13N50	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 28 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.46 Ω (Typ
20	PFP8N50	Wing On	N-Channel MOSFET  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 25 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ.