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Weitron Technology |
PNP Transistor www.DataSheet4U.com SS8550 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE=-1.0 Vdc) hFE(1) hFE(2) VCE(sat) VBE(sat) fT 85 40 |
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Weitron Technology |
NPN Transistor 1V, IC=800 mA Collector-Emitter Saturation Voltage IC=800mA, IB=80mA Base-Emitter Saturation Voltage IC=800mA, IB=80mA Base-Emitter ON Voltage VCE=1V, IC=10mA) hFE(1) hFE(2) VCE(sat) VBE(sat) VBE(ON) 85 40 - - - 400 - - - 0.5 V - 1.2 V - 1V |
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Weitron Technology |
NPN Transistor 2 10 IB = 1.0mA 0.1 IB = 0.5mA 1 0.1 0 0.4 0.8 1.2 1.6 1 10 100 1000 FIG.1 Static Characteristic VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS) I C , COLLECTOR CURRENT (mA) FIG.2 DC Current Gain VBE(s at), VCE(s at) , SATURATION VOLTAGE (m |
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Weitron Technology |
PNP Transistor 2.5mA IB=-2.0mA -0.2 IB=-1.5mA IB=-1.0mA -0.1 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 -2.0 VCE[V], COLLECTOR-EMITTER VOLTAGE FIG.1 Static Characteristic hFE, DC CURRENT GAIN 10 00 10 0 VCE = -1V 10 1 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT FIG.2 DC Cur |
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