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Weitron Technology |
NPN Plastic-Encapsulate Transistor less otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.5 Adc, VCE=2.0 Vdc) Collector-Emitter Saturation Voltage (IC=100 mAdc, IB=4 Adc) Transition Frequency (IE=-50 mAdc, VCE=6.0 Vdc,f=100 |
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Weitron Technology |
NPN Transistors untinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) DC Current Gain (IC=1.0 mAdc, VCE= 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter Saturation |
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Weitron Technology |
NPN Transistor ge IC =2A, IB =0.1A hFE(1) hFE(2) VCE(sat) VBE(sat) 100 35 560 0.5 1.2 V V DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, I C=50mA Output Capacitance VCB=10V, IE=0, f=1.0MHz Turn-off time VCC=25V, IC=1A, IB1=-IB2=0.1A Fall time VCC=25V, IC=1A, |
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Weitron Technology |
NPN Transistors untinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) DC Current Gain (IC=1.0 mAdc, VCE= 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter Saturation |
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Weitron Technology |
Epitaxial Planar NPN Transistors eter Symbol DC Current Gain (VCE=3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) Output Capacitance (VCB=10V, I E =0A, f=1MHz) h FE V CE(sat) fT Cob 82 - 390 0.4 - - V MHz p |
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Weitron Technology |
NPN Transistor cteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=2V, I C=100mA Collector-Emitter Saturation Voltage IC=2A, I B=100mA 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% hFE VCE(sat) 120 560 0.5 V DYNAMIC CHARACTERISTICS T |
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