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Weitron |
NPN Transistor V V MHz CLASSIFICATION OF hFE Rank R Range 40-80 O 70-140 Y 120-240 G 200-400 WEITRON hpp://www.weitron.com.tw 1/3 15-Feb-2011 2SC1008 Typical Characteristics WEITRON hpp://www.weitron.com.tw 2/3 15-Feb-2011 H L 2SC1008 TO-92 Outlin |
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Weitron Technology |
Silicon NPN Transistors 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw |
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Weitron Technology |
NPN Transistor or power dissipation P C ( W ) 1.0 1.25 C ollector current I C ( A ) I B =10mA 9mA 8mA 7mA 6mA 5mA 4mA 0.8 1.0 0.6 0.75 0.4 0.5 3mA 2mA 0.2 0.25 1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient tempera ture Ta (û C) 0 2 4 16 |
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WEITRON |
NPN EPITAXIAL PLANAR TRANSISTOR * Low saturation voltage, typically VCE(sat) =0.35V at IC/IB=1A/50mA. * Excellent DC current gain characteristics. Mechanical Data: * Case : Molded Plastic 2SC4672 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(TA=25ºC Un |
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Weitron Technology |
NPN Transistor ansfer Ration VCE = 6V, I C = 1mA VCE(sat) 0.3 V VBE(sat) hFE 90 - 1.0 600 V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE = 6V, IC =10mA fT 250 MHz CLASSIFICATION hFE Rank Range Marking L4 90-180 L4 L5 135-270 L5 L6 200-400 L6 L7 300- |
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Weitron Technology |
2SC2712 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw |
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Weitron |
NPN General Purpose Transistors C E =6V Fig.2 100 Grounded emitter output characteristics (1) 0.50mA mA 0 .4 5 A 0 .4 0 m 0 .3 5 mA 0.30mA 0.25mA 0.20mA T a=25 C 80 2 1 0.5 0.2 0.1 0 0.2 T a =10 0 C 25 C 55 C 60 40 0.15mA 0.10mA 20 0 0.05mA I B =0A 0 0.4 0.8 1.2 1.6 2. |
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Weitron |
NPN Transistors 89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 A TOP VIEW B C D E G H K L J M WEITRON http://www.weitron.com.tw 2/2 19-Feb-09 Free Datasheet http://www.datasheet4u.com/ |
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WEITRON |
General Purpose Transistor Excellent hFE linearity Complements the 2A1576A COLLECTOR 3 1 BASE 2 EMITTER 2SC4081 3 1 2 SOT-323(SC-70) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu |
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WEITRON |
NPN Silicon Transistor * Radio frequency ampli er * High transition frequency * High gain with low collector-to base time constant * Low noise (NF) * Marking: 1D Maximum Ratings ( TA=25°C unless otherwise noted) Rating Symbol Collector-Base Voltage VCBO Collector-Em |
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Weitron Technology |
NPN Transistor or power dissipation P C ( W ) 1.0 1.25 C ollector current I C ( A ) I B =10mA 9mA 8mA 7mA 6mA 5mA 4mA 0.8 1.0 0.6 0.75 0.4 0.5 3mA 2mA 0.2 0.25 1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient tempera ture Ta (û C) 0 2 4 16 |
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Weitron Technology |
NPN Transistor www.DataSheet4U.com * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATI |
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Weitron |
NPN Transistor Transition frequence VCE = 5V, IE = -20mA, f = 100Mhz Output Capacitance VCB = 10V, I E =0mA, f=1Mhz fT C ob 250 6.0 MHz pF CLASSIFICATION hFE Rank Range Marking P 82-180 CP Q 120-270 CQ R 180-390 CR S 270-560 CRS WEITRON http://www.weitron.com.tw |
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Weitron |
High-Frequency Amplifier Transistor 1/3 Rev.A 23-Jan-09 Free Datasheet http://www.datasheet4u.com/ 2SC3838 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain VCE=10V ,IC= 5mA Transitio |
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Weitron |
High-Frequency Amplifier Transistor uAdc WEITRON http://www.weitron.com.tw Free Datasheet http://www.datasheet4u.com/ 2SC3838Q ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (I C = |
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Weitron |
NPN Silicon Transistor * Power dissipation 1. BASE 2. EMITTER 3. COLLECTOR 2 SOT-323(SC-70) SOT-323 Outline Demensions A Unit:mm SOT-323 B C TOP VIEW D E G H K L J M Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 |
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Weitron |
NPN TRANSISTOR Power dissipation PCM Collector current ICM: 0.05 A SOT-523(SC-75) Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg C ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Colle |
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Weitron |
NPN General Purpose Transistors (sat) hFE 100 0.5 320 V SMALL-SIGNAL CHARACTERISTICS Transition Frequence VCE = 5V, IC =10mA, f = 100MHz Collector Output Capacitance VCB =10V, IE = 0, f = 1MHz fT C ob 120 13 MHz pF Classification of hFE Rank Range Marking O 100-200 FAO Y 160-320 |
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Weitron |
NPN Transistor * Excellent hFE Linearity * Low Noise 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC Ib PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle |
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Weitron |
NPN TRANSISTOR * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA SOT-523(SC-75) MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous |
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