No. | Partie # | Fabricant | Description | Fiche Technique |
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Weitron Technology |
PNP Silicon Epitaxial Power Transistor * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS |
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Weitron Technology |
PNP Plastic-Encapsulate Transistor rwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=-0.1 Adc, VCE=-3.0 Vdc) Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Transition Frequency (IC=-50 mAdc, VCE=-5.0 Vdc,f=30 MHz |
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Weitron |
PNP PLASTIC ENCAPSULATE TRANSISTORS ition Frequency VCE=-5V, IC =-500mA, f=30MHz Output Capacitance VCB=-10V, I E =0, f=1.0MHz fT Cob 100 50 MHz pF CLASSIFICATION OF hFE(1) Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 WEITRON http://www.weitron.com.tw 2/5 30-Nov-07 Free Datasheet |
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Weitron |
PNP Transistor * Low VCE(sat). ). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) MAXIMUM RATINGS (TA=25ºC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipati |
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WEITRON |
PNP Transistor |
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Weitron Technology |
PNP Plastic-Encapsulate Transistors ERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE= -3 Vdc) Collector-Emitter Saturation Voltage (IC= -500 mAdc, I B = -50mAdc) Transition Frequency ( |
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Weitron Technology |
Epitaxial Planar Transistor Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 2SB1386 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC = -0.5 Adc, VCE = -2.0 Vd |
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Weitron Technology |
PNP Transistor VCE = -5.0V, IC = -150mA VCE = -5.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA Base-Emitter Voltage VCE = -5.0V, I C = -150mA Transition frequency VCE = -5.0V, I C = -150mA Collecotr Output Capacitance VCB = -10V, I E |
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Weitron Technology |
Epitaxial Planar PNP Transistors Unit Parameter Symbol Conditions DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance CLASSIFICATION OF hFE Marking Rank Range AEQ Q 120-270 VCE(sat) h FE fT Cob 120 - 240 35 -0.5 390 - V - Ic |
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Weitron |
PNP General Purpose Transistor CTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.1 µA Max Unit µA ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwi |
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WEITRON |
PNP Transistor |
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WEITRON |
PNP Transistor * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitt |
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Weitron Technology |
Epitaxial Planar PNP Transistors Unit V MHz DC Current Gain (VCE=-3V, Ic=-0.5A) Collector-Emitter Saturation Voltage (Ic=-2A, IB =-0.2A) Transition Frequency (vCE=-5v, Ic=0.5A, f=30MHz) Output Capacitancen (VCB =-10V, I E =0A, f=1MHz) h FE VCE(sat) fT Cob 82 80 - - pF CLASSIF |
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Weitron Technology |
PNP Transistor * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector |
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Weitron Technology |
PNP Transistor VCE = -5.0V, IC = -150mA VCE = -5.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA Base-Emitter Voltage VCE = -5.0V, I C = -150mA Transition frequency VCE = -5.0V, I C = -150mA Collecotr Output Capacitance VCB = -10V, I E |
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Weitron Technology |
PNP Transistor |
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Weitron |
PNP General Purpose Transistor CTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.1 µA Max Unit µA ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwi |
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WEITRON |
PNP Transistor |
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WEITRON |
PNP Transistor |
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