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Weitron |
PNP Transistor nge O 70-140 Y 120-240 WEITRON http://www.weitron.com.tw Free Datasheet http://www.Datasheet4U.com 2SA1020 FIG1 FIG2 C C FIG3 FIG4 C C C C FIG5 FIG6 WEITRON http://www.weitron.com.tw Free Datasheet http://www.Datasheet4U.com 2SA1020 C |
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WEITRON |
PNP Transistor |
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WEITRON |
PNP General Purpose Transistors |
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Weitron |
PNP General Purpose Transistors Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -60 -50 -6.0 - Typ - Max -0.1 -0.1 Unit V V V µA µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -50mA, I B = -5mA DC Current Transfer Ration VCE = -6V, IC = -1mA VCE(sat) hFE 120 |
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WEITRON |
PNP TRANSISTOR * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Value -50 -50 -5 -150 100 125 -55 to +125 -55 to +125 Units V V V |
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Weitron Technology |
PNP General Purpose Transistors E T O E MIT T E R V OLTAG E (V ) V C E , C OLLE C TOR TO E MIT T E R V OLTAG E (V ) FIG.1 Grounded emitter propagation characteristics FIG.2 Grounded emitter output characteristics( ) –100 T A = 25°C 500 450 400 350 300 500 T A = 25°C I C , C |
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