| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
WeEn |
Thyristor he Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state - voltages IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj Average on-state current half sine wave; Ths ≤ 90 ˚C - RMS on- |
|
|
|
|
WeEn |
Thyristor he Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state - voltages IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj Average on-state current half sine wave; Ths ≤ 90 ˚C - RMS on- |
|
|
|
|
WeEn |
4Q Triac and benefits • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Low holding current for low current loads and lowest EMI at commutation • Planar passivated for voltage ruggedness and reliability • Triggering |
|
|
|
|
WeEn |
Logic level thyristor and benefits • High blocking voltage suitable for high voltage applications • Sensitive gate suitable for logic level controls 3. Applications • General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Co |
|
|
|
|
WeEn |
Thyristor he Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state - voltages IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj Average on-state current half sine wave; Ths ≤ 90 ˚C - RMS on- |
|
|
|
|
WeEn |
Silicon Carbide Diode and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced coolin |
|
|
|
|
WeEn |
4Q Triac and benefits • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Low holding current for low current loads and lowest EMI at commutation • Planar passivated for voltage ruggedness and reliability • Triggering |
|
|
|
|
WeEn |
4Q Triac and benefits • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Less sensitive gate for improved noise immunity • Triggering in all four quadrants • Isolated package 3. Applications • General purpose moto |
|
|
|
|
WeEn |
4Q Triac and benefits • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Less sensitive gate for improved noise immunity • Triggering in all four quadrants • Isolated package 3. Applications • General purpose moto |
|
|
|
|
WeEn |
thyristor and benefits • Direct interfacing with low power drivers and microcontrollers • High bidirectional blocking voltage capability • High thermal cycling performance • Planar passivated for voltage ruggedness and reliability • Sensitive gate suitable for |
|
|
|
|
WeEn |
4Q Triac and benefits • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Isolated package • Low holding current for small load currents and lowest EMI at commutation • Planar passivated for voltage ruggedness and rel |
|