| No. | Partie # | Fabricant | Description | Fiche Technique |
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WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET 18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode power field effect transis |
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