| No. | Partie # | Fabricant | Description | Fiche Technique |
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WEJ |
DIODE TPower dissipation .,LPD: 200 mW (Tamb=25℃) Forward Current IF: OReverse Voltage 200 m A VR: 30 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ RONICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) |
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WEJ |
Schottky Barrier Diode 1. High reliability .,L2. Very low forward voltage 3. Small surface mounting type COApplications Applications where a very low forward voltage ICis required ONAbsolute Maximum Ratings RTj=25 Parameter TRepetitive peak reverse voltage Forward co |
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WEJ |
DIODE TPower dissipation .,LPD: 200 mW (Tamb=25℃) Forward Current IF: OReverse Voltage 200 m A VR: 30 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ RONICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) |
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WEJ |
DIODE TPower dissipation .,LPD: 200 mW (Tamb=25℃) Forward Current IF: OReverse Voltage 200 m A VR: 30 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ RONICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) |
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WEJ |
DIODE TPower dissipation .,LPD: 200 mW (Tamb=25℃) Forward Current IF: OReverse Voltage 200 m A VR: 30 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ RONICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) |
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WEJ |
DIODE Extremely Fast Switching Speed Low forward voltage – 0.35 V (Typ) @ IF= 10 mAdc MARKING: JV Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol DC reverse voltage VR ICForward current IF Repetitive peak forw |
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WEJ |
Schottky Barrier Diode 1. High reliability .,L2. Very low forward voltage 3. Integrated protection ring against static discharge COApplications ICApplications where a very low forward voltage is required ONAbsolute Maximum Ratings TRTj=25 Parameter Continuous reverse |
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WEJ |
DIODE Power dissipation PD : 200 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 30V .,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C -+ CO+ BAT54 Marking:KL1 - -- BAT54A Marking:KL2 + 2.9 1.9 0.95 0.95 0.4 |
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WEJ |
DIODE TPower dissipation .,LPD: 200 mW (Tamb=25℃) Forward Current IF: OReverse Voltage 200 m A VR: 30 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ RONICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) |
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