| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
WEITRON |
NPN Low Voltage Output Amplifiers |
|
|
|
|
Weitron Technology |
NPN Transistors untinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) DC Current Gain (IC=1.0 mAdc, VCE= 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter Saturation |
|
|
|
|
WEITRON |
Surface Mount Schottky Barrier Diodes *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-123 Package Mechanical Data: *Polarity: Cathode Band *Leads: Solderable per MIL-STD-202 Method 208 *Wight: 0.01grams(approx) SD103AW/BW/CW SMALL SIGNA |
|
|
|
|
Weitron Technology |
NPN Transistor ge IC =2A, IB =0.1A hFE(1) hFE(2) VCE(sat) VBE(sat) 100 35 560 0.5 1.2 V V DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, I C=50mA Output Capacitance VCB=10V, IE=0, f=1.0MHz Turn-off time VCC=25V, IC=1A, IB1=-IB2=0.1A Fall time VCC=25V, IC=1A, |
|
|
|
|
Weitron Technology |
NPN Transistors untinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) DC Current Gain (IC=1.0 mAdc, VCE= 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter Saturation |
|
|
|
|
Weitron Technology |
Surface Mount TVS Diodes Array * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability * Low Leakage Current * Protects one I/O or Power line * Solid-state Silicon-avalanche Technology * Small Package |
|
|
|
|
Weitron Technology |
Surface Mount Schottky Barrier Diodes Description These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, extremely low forward voltage reduces conduction loss, miniature surface mount package is excellent for hand held |
|
|
|
|
WEITRON |
Surface Mount Schottky Barrier Diodes *Low Forward Voltage *Guard Ring Construction for Transient Protection *Negligible Reverse Recovery Time *Low Capacitance *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Mechanical Data: *Polarity: Cathode Band *Leads: Solderable per MIL- |
|
|
|
|
WEITRON |
Surface Mount Schottky Barrier Diodes *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-123 Package Mechanical Data: *Polarity: Cathode Band *Leads: Solderable per MIL-STD-202 Method 208 *Wight: 0.01grams(approx) SD103AW/BW/CW SMALL SIGNA |
|
|
|
|
Weitron |
Surface Mount Schottky Barrier Diodes *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Mechanical Data: *Polarity: Cathode Band *Leads: Solderable per MIL-STD-202 Method 208 *Wight: 0.004grams(approx) 1 2 SOD-323 SOD-323 Ou |
|
|
|
|
Weitron |
Surface Mount Schottky Barrier Diodes *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Mechanical Data: *Polarity: Cathode Band *Leads: Solderable per MIL-STD-202 Method 208 *Wight: 0.004grams(approx) 1 2 SOD-323 SOD-323 Ou |
|
|
|
|
Weitron |
Surface Mount Schottky Barrier Diodes *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Mechanical Data: *Polarity: Cathode Band *Leads: Solderable per MIL-STD-202 Method 208 *Wight: 0.004grams(approx) 1 2 SOD-323 SOD-323 Ou |
|
|
|
|
Weitron Technology |
Epitaxial Planar NPN Transistors eter Symbol DC Current Gain (VCE=3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) Output Capacitance (VCB=10V, I E =0A, f=1MHz) h FE V CE(sat) fT Cob 82 - 390 0.4 - - V MHz p |
|
|
|
|
Weitron Technology |
D-PAK Surface Mount Schottky Barrier Rectifiers F(AV) 30CT 30 21 30 WSD10 35CT 40CT 35 25 35 5.0 10 40 28 40 45CT 45 32 45 Unit V R IFSM 125 C =25 C VF IR 0.55 0.5 5.0 TJ, TSTG -65 to 125 www.DataSheet4U.com WEITRON http://www.weitron.com.tw 2/3 WSD1030CT thru WSD1045CT AVERAGE FO |
|
|
|
|
Weitron Technology |
D-PAK Surface Mount Schottky Barrier Rectifiers F(AV) 30CT 30 21 30 WSD10 35CT 40CT 35 25 35 5.0 10 40 28 40 45CT 45 32 45 Unit V R IFSM 125 C =25 C VF IR 0.55 0.5 5.0 TJ, TSTG -65 to 125 www.DataSheet4U.com WEITRON http://www.weitron.com.tw 2/3 WSD1030CT thru WSD1045CT AVERAGE FO |
|
|
|
|
Weitron Technology |
D-PAK Surface Mount Schottky Barrier Rectifiers F(AV) 30CT 30 21 30 WSD10 35CT 40CT 35 25 35 5.0 10 40 28 40 45CT 45 32 45 Unit V R IFSM 125 C =25 C VF IR 0.55 0.5 5.0 TJ, TSTG -65 to 125 www.DataSheet4U.com WEITRON http://www.weitron.com.tw 2/3 WSD1030CT thru WSD1045CT AVERAGE FO |
|
|
|
|
Weitron Technology |
D-PAK Surface Mount Schottky Barrier Rectifiers F(AV) 30CT 30 21 30 WSD10 35CT 40CT 35 25 35 5.0 10 40 28 40 45CT 45 32 45 Unit V R IFSM 125 C =25 C VF IR 0.55 0.5 5.0 TJ, TSTG -65 to 125 www.DataSheet4U.com WEITRON http://www.weitron.com.tw 2/3 WSD1030CT thru WSD1045CT AVERAGE FO |
|
|
|
|
Weitron |
NPN Transistor MAX UNIT V V V μA μA IC=100μA,IE=0 IC =1mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VEB=7V,IC=0 VCE=2V,IC=200mA VCE=2V,IC=600mA VCE=2V,IC=2A IC=1.5A,IB=150mA IC=1.5A,IB=150mA VCE=5V,IC=1.5A VCB=10V,IE=0,f=1MHz 120 30 10 10 60 100 50 400 0.25 1.2 V V MH |
|
|
|
|
WEITRON |
Surface Mount Schottky Barrier Diodes *Low Forward Voltage *Guard Ring Construction for Transient Protection *Negligible Reverse Recovery Time *Low Capacitance *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Mechanical Data: *Polarity: Cathode Band *Leads: Solderable per MIL- |
|
|
|
|
WEITRON |
Surface Mount Schottky Barrier Diodes *Low Forward Voltage *Guard Ring Construction for Transient Protection *Negligible Reverse Recovery Time *Low Capacitance *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Mechanical Data: *Polarity: Cathode Band *Leads: Solderable per MIL- |
|