| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
|
|
|
|
Vishay |
Adjustable Tubular • High temperature vitreous coating • Complete welded construction • Tight tolerance of 5 % for values above 1 • Excellent stability in operation (< 3 % change in resistance) • Material categorization: for definitions of compliance please see www. |
|
|
|
|
Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 2 VT760 PIN 1 PIN 2 CASE A VIT760 NC A 1 K NC K HEATSINK |
|