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Vishay VT4 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
30LVT47-R

Vishay
LCD

• Complying with IEC 60384-14
• High reliability
• Complete range of capacitance values
• Radial leads
• Singlelayer AC disc safety capacitors
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 QUICK REFEREN
Datasheet
2
VT4060C-E3

Vishay
Dual Trench MOS Barrier Schottky Rectifier

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TY
Datasheet
3
VT4045C

Vishay
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
TMBS TO-220AB ®
• Trench MOS Schottky technology TO-262AA
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
Datasheet
4
VT4060C

Vishay
Dual Trench MOS Barrier Schottky Rectifier

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT4060C PIN 1 P
Datasheet
5
VT4045BP

Vishay
Trench MOS Barrier Schottky Rectifier

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2011/65/EU
• Halogen-free according to IEC 61249-2-21 definition 2
Datasheet
6
VT4045C-M3

Vishay
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vis
Datasheet
7
VT4045CHM3

Vishay
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vis
Datasheet
8
VT4045BP-M3

Vishay
Trench MOS Barrier Schottky Rectifier

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PI
Datasheet



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