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Vishay |
High Speed Infrared Emitting Diodes • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • Peak wavelength: λp = 850 nm • High reliability • High radiant power 22689 • Very high radiant intensity • Angle of half intensity: ϕ = ± 28° • |
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Vishay |
High Speed Infrared Emitting Diodes • Package type: surface mount • Package form: side view • Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 25° • Low forwar |
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Vishay Siliconix |
High Speed Infrared Emitting Diode • Package type: surface-mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 60° • Low forward v |
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Vishay |
Ultra High Precision Foil Wraparound Surface Mount Chip Resistor • Temperature coefficient of resistance (TCR): 0.05 ppm/°C typical (0 °C to + 60 °C) 0.2 ppm/°C typical (- 55 °C to + 125 °C, + 25 °C ref.) • Tolerance: to ± 0.01 % • Power coefficient “ΔR due to self heating”: 5 ppm at rated power • Power rating: to |
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Vishay |
High Power Infrared Emitting Diode • Package type: surface-mount • Double stack technology • Package form: power QFN • Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.00 • Peak wavelength: λp = 850 nm • Zener diode for ESD protection up to 2 kV • High radiant power • High radiant intens |
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Vishay |
High Speed Infrared Emitting Diodes • Package type: surface-mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.8 • Peak wavelength: λp = 850 nm • AEC-Q101 qualified • High speed • Angle of half intensity: ϕ = ± 60° • 0805 standard surface-mountable package • Floor |
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Vishay |
High Power Infrared Emitting Diode a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES • Package type: surface-mount • Package form: high power SMD with lens • Dimensions (L x W x H i |
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Vishay Siliconix |
Bulk Metal Foil Technology Discrete Surface Mount Chip Resistors • Nominal TCR: + 0.6ppm/°C (0 to 25°C) - 0.6ppm/C° (+ 25°C to + 60°C) + 2.2ppm/°C (- 55°C to + 25°C) - 1.8ppm/°C (+ 25°C to + 125°C) • Absolute Tolerance: to ± 0.01% • Resistance Range: 5.5Ω to 12K • Load Life Stability: ± 0.025% (2000 hours @ 70°C) |
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Vishay Siliconix |
Ultimate Tracking Surface Mount Divider Product may not be to scale • • • • • • • • This extremely small surface mount voltage divider made of Bulk Metal® Foil technology offers the ultimate in tracking and ultimate in ratio stability. Additionally Bulk Metal® Foil has an extremely low a |
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Vishay Siliconix |
High Speed Infrared Emitting Diodes • Package type: surface-mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • Very high radiant intensity • Angle of half intensity: ϕ = ± 10° • Suitable |
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Vishay Siliconix |
High Power Infrared Emitting Diode • • • • • • • • • • • • • • • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± |
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Vishay |
Discrete High Precision Surface Mount Chip Resistor • Excellent Load Life Stabilty: (70°C for 2000 hours) ± 0.005% at 200mW ± 0.01% at 300mW • High Rated Power at +70°C: 300mW • Tight Tolerance to ± 0.01% (see table 1) • Low TCR to ± 2ppm/°C (see table 1) • Resistance Range: 10Ω to 30KΩ (for lower and |
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Vishay |
Ultra High Precision Foil Wraparound Surface Mount Chip Resistor Temperature coefficient of resistance (TCR): 0.05 ppm/°C typical (0 °C to + 60 °C) 0.2 ppm/°C typical (- 55 °C to + 125 °C, + 25 °C ref.) Tolerance: to ± 0.01 % Power coefficient “R due to self heating”: 5 ppm at rated power Power rating: to |
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Vishay |
Ultra High Precision Foil Wraparound Surface Mount Chip Resistor • Temperature coefficient of resistance (TCR): 0.05 ppm/°C typical (0 °C to + 60 °C) 0.2 ppm/°C typical (- 55 °C to + 125 °C, + 25 °C ref.) • Tolerance: to ± 0.01 % • Power coefficient “ΔR due to self heating”: 5 ppm at rated power • Power rating: to |
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Vishay |
Ultra High Precision Foil Wraparound Surface Mount Chip Resistor • Temperature coefficient of resistance (TCR): 0.05 ppm/°C typical (0 °C to + 60 °C) 0.2 ppm/°C typical (- 55 °C to + 125 °C, + 25 °C ref.) • Tolerance: to ± 0.01 % • Power coefficient “ΔR due to self heating”: 5 ppm at rated power • Power rating: to |
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Vishay |
Standard Recovery Diodes • Standard rectifier • Popular series for rough service • Cathode and anode to base available • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/ |
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Vishay |
Standard Recovery Diodes • Standard rectifier • Popular series for rough service • Cathode and anode to base available • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/ |
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Vishay |
High Speed Infrared Emitting Diodes • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 7° • Low forward vo |
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Vishay |
High Speed Infrared Emitting Diode • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • AEC-Q101 qualified • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = |
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Vishay |
Dual Color Emitting Diodes • Package type: surface-mount • Package form: square PCB • Dimensions (L x W x H in mm): 2 x 2 x 0.87 • Peak wavelength: λp = 660 nm and 940 nm • High reliability • High radiant power • Angle of half intensity: ϕ = ± 60° • Floor life: 168 h, MSL 3, a |
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