Vishay Telefunken BF9 fiche technique

No.	Partie #	Fabricant	Description
1	BF961	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF961 Marking: BF961 Plastic case (TO 50) 1=Drain, 2=So
2	BF966S	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=
3	BF970	Vishay Telefunken	Silicon PNP Planar RF Transistor D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter volta
4	BF995	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance G2 G1 D 94 9279 13 579 3 4 12623 BF995 Marking: MB Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2,
5	BF998R	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO
6	BF998RW	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO
7	BF960	Vishay Telefunken	N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE
8	BF964	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF964S Marking: BF964S Plastic case (TO 50) 1=Drain, 2=
9	BF964S	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF964S Marking: BF964S Plastic case (TO 50) 1=Drain, 2=
10	BF979	Vishay Telefunken	Silicon PNP Planar RF Transistor D High cross modulation performance D High power gain 3 D Low noise D High reverse attenuation 2 94 9308 13623 1 BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherw
11	BF988	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D D D D Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 1 D BF988 Marking: BF988 Plastic case (TO 50)
12	BF994S	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 94 9279 13 579 3 4 12623 BF994 Marking: MG Plastic case (SOT 143) 1=Sourc
13	BF996S	Vishay Telefunken	N.Channel Dual Gate MOS-Fieldeffect Tetrode D Integrated gate protection diodes D Low noise figure D Low feedback capacitance 2 1 D High cross modulation performance D Low input capacitance D High AGC-range G2 G1 D 94 9279 13 579 3 4 12623 BF996S Marking: MH Plastic case (SOT 143) 1=Sour
14	BF998	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO