| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
Dual - MOSMIC- two AGC Amplifiers • Two differently optimized amplifiers in a single package. One of them has a fully internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL -IC • Internal s |
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Vishay Siliconix |
Silicon NPN Planar RF Transistor • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Typ: TSDF1220F Case: SOT-490 Plastic case Weight: |
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Vishay Siliconix |
Dual - MOSMIC - two AGC Amplifiers RFC +5 V D 3 C RF out 2 (TSDF54040X) 5 (TSDF54040XR) D Two AGC amplifiers in a single package D Integrated gate protection diodes D Low noise figure D High gain, very high forward transadmittance (40 mS typ.) D Biasing network on chip D Improved cr |
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Vishay Siliconix |
Dual - MOSMIC - two AGC Amplifiers RFC +5 V D 3 C RF out 2 (TSDF54040X) 5 (TSDF54040XR) D Two AGC amplifiers in a single package D Integrated gate protection diodes D Low noise figure D High gain, very high forward transadmittance (40 mS typ.) D Biasing network on chip D Improved cr |
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Vishay Siliconix |
25 GHz Silicon NPN Planar RF Transistor D Very low noise figure D Very high power gain D High transition frequency fT = 24 GHz D Low feedback capacitance D Emitter pins are thermal leads 1 2 4 3 TSDF1920W Marking: YH3 Plastic case (SOT 343R) 1 = Emitter, 2 = Base, 3 = Emitter, 4 = Coll |
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