No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
N-Channel 240-V (D-S) MOSFETs D D D D D Low On-Resistance: 3.5 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240-V (D-S) MOSFETs D D D D D Low On-Resistance: 3.5 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error |
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Vishay Siliconix |
N-Channel 240-V (D-S) MOSFETs D D D D D Low On-Resistance: 3.5 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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Vishay Siliconix |
N-Channel 240 -V (D-S) MOSFET D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Vo |
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