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Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET sical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number |
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Vishay Siliconix |
N-Channel 12-V (D-S) MOSFET • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D Marking Code D 2 D D R XX YY Lot Traceability and Date Code 5 G 3 4 S Par |
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Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices D1 D2 G3 6D 5D 4S Marking Code YY S XX Lot Traceability a |
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Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET • TrenchFET® Power MOSFET • 100 % Rg & UIS Tested APPLICATIONS • Load Switch for Portable Devices RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code AG XX YY D 2 5 D G Lot Traceability and Date Code Part # Code D G 3 4 S S Top View |
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Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.115 @ VGS = –4.5 V –20 0.155 @ VGS = –2.5 V 0.220 @ VGS = –1.8 V ID (A) –2.9 –2.4 –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Lev |
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Vishay Siliconix |
MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Top View Marking Code YY RD XX Lot Traceability and Da |
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Vishay Siliconix |
Dual P-Channel 1.8-V (G-S) MOSFET hysical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same numbe |
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Vishay Siliconix |
Dual P-Channel 2.5-V (G-S) MOSFET Number: 71081 S-21374—Rev. B, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W 2-1 Si1903DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter St |
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Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 0.115 @ VGS = 4.5 V 2.9 rDS(on) (W) 0.075 @ VGS = 10 V ID (A) 3.6 D TrenchFETr Power MOSFET D Thermally Enhanced SC-70 Package D PWM Optimized APPLICATIONS D Boost Converter in Portable Devices – Low Gate Charge (3 nC) |
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Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.065 @ VGS = 4.5 V 20 0.075 @ VGS = 2.5 V 0.096 @ VGS = 1.8 V ID (A) 3.9 3.6 3.2 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package Pb-free Available APPLICATIONS D Load Switching D PA |
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Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET 1560—Rev. B, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 165 180 105 Maximum 200 220 130 Unit _C/W 2-1 Si1405DL www.DataSheet4U.com Vishay Siliconix New Product SPECIFICATION |
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Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Devices RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code BO D 2 5 D Part # Code XX YY Lot Traceability and Date Code G 3 Top View 4 S Ordering Information: Si1405BDH |
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Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET ID (A) 3.4 2.5 rDS(on) (W) 0.077 @ VGS = 4.5 V 0.120 @ VGS = 2.5 V D TrenchFETr Power MOSFET: 2.5-V Rated APPLICATIONS D Load Switch for Portable Applications Product Is Completely Pb-free SOT-363 SC-70 (6-LEADS) D 1 6 5 D Marking Code YY Lot Tr |
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Vishay Siliconix |
N-Channel MOSFET D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation H |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Low On-Resistance: 1.25 • Low Threshold: 2.5 V • Low Input Capacitance: 30 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • Miniature Package • ESD |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • High-Side Switching • Low On-Resistance: 8 • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 45 ns • TrenchFET® Power MOSFETs: 1.5 V Rated • ESD Protected: 2000 V • Compliant to RoHS Direc |
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Vishay Siliconix |
N-Channel MOSFET |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC SOT-323 SC-70 (3-LEADS) G1 3D S2 Top View Marking Code YY LA X Lot Traceability and Date Code Part # Code O |
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Vishay Siliconix |
P-Channel MOSFET • TrenchFET® Power MOSFET: 1.8 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SOT-323 SC-70 (3-LEADS) G1 S2 3D Top View Marking Code YY LB X Lot Traceability and Date Code Part # Code Ordering |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch |
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