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Vishay Siliconix |
N-Channel MOSFET ID (A)b 63b 52b rDS(on) (Ω) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU5 |
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Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS TO-251 • Primary Side Switch • Isolated DC/DC Converter D Drain Connected to Drain-Tab G D S G Top View Ordering Information: SUU50N10-18P-E3 (Lead (Pb) |
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Vishay Siliconix |
N-Channel MOSFET ww.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W 1 www.DataSheet4U.net SUU50N03-10P Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Sour |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET ID (A)a 17.5 14.5 rDS(on) (Ω) 0.012 @ VGS = 10 V 0.0175 @ VGS = 4.5 V APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU50N03- |
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Vishay Siliconix |
P-Channel MOSFET SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70780 S-20349—Rev. F, 18-Apr-02 www.vishay.com Free Air RthJA RthJC Symbol Typical 60 120 3.7 Maximum 70 140 4.0 Unit _C/W 2-1 www.Dat |
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Vishay Siliconix |
N-Channel MOSFET ID (A) 15 15 rDS(on) (Ω) 0.095 @ VGS = 10 V 0.100 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D 100% Rg Tested APPLICATIONS D Primary Side Switch D TO-251 G Drain Connected to Tab G D S S Top View Ordering Information |
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