| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Vishay Siliconix |
SUD50N024 ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Co |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET ID (A) - 50 d - 50 rDS(on) (W) 0.015 @ VGS = - 10 V 0.020 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automtoive 12-V Boardnet S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information: S |
|
|
|
|
Vishay Siliconix |
SUD50N025-05P D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion, Low-Side − Desktop PC − Notebook PC D GDS Top View Drain Connected to Tab Ordering Information: SUD50N025-05P—E3 (Lead (Pb)-Free) G S N-Channel MOSFET A |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET PRODUCT SUMMARY VDS (V) −40 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) −60c −48 rDS(on) (W) 0.013 @ VGS = −10 V 0.022 @ VGS = −4.5 V APPLICATIONS D Automotive Such As: − High-Side Switch − Motor Drive − 12-V Boardnet TO |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET ID (A) 20 16 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-07 SUD50N03-07—E3 ( |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET ID (A)b 84b 59b rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-252 |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Co |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET stics). b. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same num |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70780 S-20349—Rev. F, 18-Apr-02 www.vishay.com Free Air RthJA RthJC Symbol Typical 60 120 3.7 Maximum 70 140 4.0 Unit _C/W 2-1 www.Dat |
|
|
|
|
Vishay Siliconix |
SUD45P03-10 nd Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70766 S-02596—Rev. D, 21-Nov-00 www.vishay.com 2-1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SUD45P03-10 Vishay Siliconix SPECIFICATIO |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET t Number: 71253 S –01584—Rev. A, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Symbol RthJA RthJC Typical 40 80 6.0 Maximum 50 100 7.5 Unit _C/W 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SUD06N1 |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET 8-970-5600 t v 10 sec Steady State Symbol RthJA RthJC RthJL Typical 17 50 2 4 Maximum 20 60 2.4 4.8 Unit _C/W _C/W 2-1 SUD40N03-18P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source B |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-Side Synchronous Buck DC |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET hJA RthJC Typical 15 40 1.2 Maximum 18 50 1.5 Unit _C/W 1 SUD50P04-15 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET ID (A)d - 50 - 50 rDS(on) (W) 0.0094 @ VGS = - 10 V 0.0145 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive 12-V Boardnet S TO-252 G Drain Connected to Tab G D S Top View Ordering Information: SUD |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D Drain Connected to Tab GDS Top View Ordering Information: SUD50N06-09L-E3 (Lead (Pb)-free) G S N- |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET ation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D GD S Top View Drain Connected to Tab Ordering Information: SUD50N03-12P-E3 (Lead (PB) free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET 00 t v 10 sec Steady State Symbol RthJA RthJC RthJL Typical 17 50 2 4 Maximum 20 60 2.4 4.8 Unit _C/W _C/W 1 SUD50N03-11 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Vo |
|