| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
(SS3P5 / SS3P6) High Current Density Surface Mount Schottky Rectifiers • Very low profile - typical height of 1.0 mm eSMP Series ® • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 quali |
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Vishay Siliconix |
High-Current Density Surface Mount Schottky Rectifier • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C • Component in accordance |
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Vishay Siliconix |
High-Voltage Surface Mount Schottky Rectifier • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • Low leakage current • High surge capability DO-214AB (SMC) • Meets MSL level 1, per J-STD-0 |
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Vishay Siliconix |
(SS3H9 / SS3H10) High-Voltage Surface Mount Schottky Rectifier • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • Low leakage current • High surge capability DO-214AB (SMC) • Meets MSL level 1, per J-STD-0 |
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Vishay Siliconix |
High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.0 mm eSMP Series ® • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 quali |
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Vishay Siliconix |
(SS3P3L / SS3P4L) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency 1 2 • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compl |
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Vishay Siliconix |
(SS3P3L / SS3P4L) High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency 1 2 • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compl |
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Vishay Siliconix |
(SS3P5 / SS3P6) High Current Density Surface Mount Schottky Rectifiers • Very low profile - typical height of 1.0 mm eSMP Series ® • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 quali |
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Vishay Siliconix |
(SS3P5L / SS3P6L) Low VF High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency 1 2 • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compl |
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Vishay Siliconix |
(SS3P5L / SS3P6L) Low VF High Current Density Surface Mount Schottky Barrier Rectifiers • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency 1 2 • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compl |
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