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Vishay Siliconix |
Power MOSFET • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage T |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991 |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vis |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120) • Straight Lead (IRFU9120, SiHFU9120) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please |
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Vishay Siliconix |
Power MOSFET 800 6.5 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com DESCRIPTION Third generation Power MOSFETs fro |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitve Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third g |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • P-Channel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer wit |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide |
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Vishay Siliconix |
Power MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power M |
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Vishay Siliconix |
Power MOSFET • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power M |
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Vishay Siliconix |
Power MOSFET 200 0.18 • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Thir |
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Vishay Siliconix |
Power MOSFET 60 0.018 • Dynamic dV/dt Rating • Isolated Central Mounting Hole • 175 °C Operating Temperature • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from |
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Vishay Siliconix |
Power MOSFET • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements Available RoHS* COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Th |
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Vishay Siliconix |
Power MOSFET • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications • Low Gate Charge Results in Simple Drive Requirement Available RoHS* COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Thres |
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Vishay Siliconix |
Power MOSFET • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Available • Lower Gate Charge Results in Simpler Drive RoHS* Requirements COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Volt |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR120, SiHFR120) • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance p |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024, SiHFR9024) • Straight Lead (IRFU9024, SiHFU9024) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220) • Straight Lead (IRFUFU9220, SiHFU9220) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance pleas |
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