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Vishay Siliconix |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC D1 G1 A/S2 A/S2 G2 1 2 3 4 SO-8 8 D1 7 D2/S1 6 D2/S1 5 D2/S1 Top View Ordering Information: Si4816 |
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Vishay Siliconix |
N-Channel MOSFET D IDM IS IF IFM Symbol Limit 30 30 "20 10 8 50 2.3 4.0 50 2.5 1.6 2.0 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi t (t v 10 sec) )a Device MOSFET Schottky MOSFET Symbol Typi |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Game Station - Load Switch S G D P-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Sourc |
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Vishay Siliconix |
P-Channel MOSFET D TrenchFETr Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4427DY-T1 Si4427DY-T1 –E3 (Lead (Pb)-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs S |
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Vishay Siliconix |
MOSFET D TrenchFETr Power MOSFET D 100 % Rg Tested D UIS Tested APPLICATIONS D CCFL Inverter RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4565DY –T1 –E3 (Lead (Pb) –free) D1 S2 G2 G1 S1 N-Channel MOSFET |
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Vishay Siliconix |
N-Channel MOSFET ID (A) 9 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 1.4 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4812DY Si4812DY-T1 |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Advanced High Cell Density Process • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs S G D P-Channel MOSFET ABSOLU |
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Vishay Siliconix |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • PWM Optimized • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.51 V |
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Vishay Siliconix |
Dual P-Channel MOSFET exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the sam |
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Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % RG Tested APPLICATIONS • DC/DC Converters • Synchronous Rectifiers D Available RoHS* COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, u |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Game Station - Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Pa |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET® Power MOSFET • 100 % Rg Tested • Avalanche Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS • Primary Side Switch In: - Telecom Power Supplies - Distributed Power Ar |
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Vishay Siliconix |
P-Channel MOSFET Limit 55 Unit _C/W 2-1 Si4807DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) rDS1(on) |
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Vishay Siliconix |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4936ADY-T1-E3 (Lead (Pb)-free) Si4936ADY-T1-GE3 |
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Vishay Siliconix |
N-Channel MOSFET D D D D D 0- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V Switching Frequency: 250 kHz to 1 MHz Integrated Schottky DESCRIPTIO |
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Vishay Siliconix |
Dual N-Channel 40-V (D-S) MOSFET ID (A)a 5.0 4.7 56 5.6 rDS(on) (W) 0.060 at VGS = 10 V 0.070 at VGS = 4.5 V Qg (Typ) D TrenchFETr Power MOSFET D 100 % Rg Tested APPLICATIONS D CCFL Inverter D1 D2 RoHS COMPLIANT www.DataSheet4U.com S1 G1 S2 G2 1 2 3 4 SO-8 8 7 6 5 Top View Or |
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Vishay Siliconix |
5-A Controlled Slew Rate Load Switch D 5-A Maximum Load D Switches Voltages 1.8- to 5.5-V D Ground Referenced Logic Inputs D 1.8- to 5-V Logic Voltage Compatible D 25-mW Maximum On-Resistance D Level-Shifted Gate Drive Means The Control (Logic) Voltage Is Independent Of Power Voltage D |
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Vishay Siliconix |
Dual N-Channel 30-V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook Logic dc-to-dc • Low Current dc-to-dc D1 G1 1 S2 2 S2 3 G2 4 SO-8 8 D1 7 |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V ID (A) 20 19 D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Converters D Synchronous Recti |
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Vishay Siliconix |
Dual N-Channel MOSFET • LITTLE FOOT® Plus Schottky • Si4830DY Pin Compatible • PWM Optimized • 100 % Rg Tested Pb-free RoHS COMPLIANT APPLICATIONS • Asymmetrical Buck-Boost DC/DC Converter S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: S |
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