No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
Low VF Schottky Barrier Rectifier • Guardring for overvoltage protection • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • |
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Vishay Siliconix |
Schottky Barrier Rectifier • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage pro |
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Vishay Siliconix |
Dual Schottky Barrier Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB pa |
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Vishay Siliconix |
Dual Schottky Barrier Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB pa |
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Vishay Siliconix |
Dual Schottky Barrier Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 quali |
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Vishay Siliconix |
Low VF Schottky Barrier Rectifier • Guardring for overvoltage protection • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • |
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Vishay Siliconix |
Schottky Barrier Rectifier • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage pro |
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Vishay Siliconix |
Dual Schottky Barrier Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB pa |
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Vishay Siliconix |
Dual Schottky Barrier Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB pa |
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Vishay Siliconix |
Dual Schottky Barrier Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB pa |
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Vishay Siliconix |
Low VF Schottky Barrier Rectifier • Guardring for overvoltage protection • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • |
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|
|
Vishay Siliconix |
Schottky Barrier Rectifier • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage pro |
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Vishay Siliconix |
Dual Common-Cathode Low Vf OR-ing Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 s • Material categorization: for definitions |
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