No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
Power Resistors • High power rating: 500 W • High overload capability up to 2 times rated power (see energy curve) • Heatsink mounting • Low thermal radiation of the case • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 M |
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Vishay Siliconix |
MOSMIC • Easy Gate 1 switch-off with PNP switching transistors inside PLL e3 www.DataSheet4U.com • High AGC-range with less steep slope • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance (30 mS typ.) • Improved |
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Vishay Siliconix |
MOSMIC • Easy Gate 1 switch-off with PNP switching transistors inside PLL e3 www.DataSheet4U.com • High AGC-range with less steep slope • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance (30 mS typ.) • Improved |
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Vishay Siliconix |
MOSMIC • Easy Gate 1 switch-off with PNP switching transistors inside PLL www.DataSheet4U.com • High AGC-range with less steep slope • Integrated gate protection diodes • Low noise figure • High gain, very high forward transadmittance (40 mS typ.) • Improve |
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Vishay Siliconix |
MOSMIC • Easy Gate 1 switch-off with PNP switching transistors inside PLL www.DataSheet4U.com • High AGC-range with less steep slope • Integrated gate protection diodes • Low noise figure • High gain, very high forward transadmittance (40 mS typ.) • Improve |
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Vishay Siliconix |
MOSMIC • Easy Gate 1 switch-off with PNP switching transistors inside PLL www.DataSheet4U.com • High AGC-range with less steep slope • Integrated gate protection diodes • Low noise figure • High gain, very high forward transadmittance (40 mS typ.) • Improve |
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Vishay Siliconix |
MOSMIC • Easy Gate 1 switch-off with PNP switching transistors inside PLL e3 www.DataSheet4U.com • High AGC-range with less steep slope • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance (30 mS typ.) • Improved |
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