| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Isolated central mounting hole • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling Available • Material categorization: for definitions of compliance please see www.vish |
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Vishay Siliconix |
Power MOSFET 200 0.18 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION Third gener |
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Vishay Siliconix |
Power MOSFET • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Surface Mount (IRFR024, SiHFR024) • Straight Lead (IRFU024, SiHFU024) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: For definitions of compliance pl |
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Vishay Siliconix |
Power MOSFET - 50 0.33 • • • • • • • P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 G DESCRIPTION The Power MOSFET |
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Vishay Siliconix |
Power MOSFET • Optimal Design 550 0.25 - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate |
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Vishay Siliconix |
Inductors Epoxy Conformal Coated • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life • Heat resistant adhesives |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance p |
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Vishay Siliconix |
Power MOSFET - 50 0.33 www.DataSheet4U.com • • • • • • • Surface Mountable (Order as IRFR9022/SiHFR9022) Available Straight Lead Option (Order as IRFU9022/SiHFU9022) RoHS* Repetitive Avalanche Ratings COMPLIANT Dynamic dV/dt Rating Simple Drive Requirements Ea |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024, SiHFR9024) • Straight Lead (IRFU9024, SiHFU9024) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9210, SiHFR9210) • Straight Lead (IRFU9210, SiHFU9210) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please |
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Vishay Siliconix |
Power MOSFET 0.27 www.datasheet4u.com VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dyna |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR420, SiHFR420) • Straight lead (IRFU420, SiHFU420) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitio |
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Vishay Siliconix |
Power MOSFET • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Effective Coss specified • Material categorization: |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024, SiHFR9024) • Straight Lead (IRFU9024, SiHFU9024) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120) • Straight Lead (IRFU9120, SiHFU9120) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFRC20, SiHFRC20) • Straight lead (IRFUC20, SiHFUC20) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitio |
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