| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
High Current Inductor • Lowest height (2.4 mm) in this package footprint • Shielded construction • Frequency range up to 5.0 MHz • Lowest DCR/µH, in this package size Manufactured under one or more of the following: US Patents; 6,198,375/6,204,744/6,449,829/6,460,244. Sev |
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Vishay Siliconix |
Commercial Inductors • Lowest height (3.0 mm) in this package footprint • Shielded construction • Excellent DC/DC energy storage up to 5 MHz. Filter inductor applications up to SRF (see “Standard Electrical Specifications” table) • Lowest DCR/μH, in this package size • H |
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Vishay Siliconix |
Commercial Inductor • Lowest height (2.4 mm) in this package footprint • Shielded construction • Frequency range up to 5.0 MHz • Lowest DCR/μH, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite const |
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Vishay Siliconix |
High Current IHLP Inductors • Shielded construction • Frequency range up to 2.0 MHz • Lowest DCR/μH, in this package size Manufactured under one or more of the following: US Patents; 6,198,375/6,204,744/6,449,829/6,460,244. Several foreign patents, and other patents pending. • |
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Vishay Siliconix |
Inductors • Shielded construction • Lowest DCR/μH, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction • Excellent temperature stability for inductance and saturation • Excellent |
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Vishay Siliconix |
Low Profile High Current IHLP • Shielded construction • Frequency range up to 1.0 MHz • Operating temperature up to 125 °C • Lowest DCR/μH, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction Manufa |
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Vishay Siliconix |
Commercial Inductors • Shielded construction • Frequency range up to 5.0 MHz • Lowest DCR/μH, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction • IHLP design. PATENT(S): www.vishay.com/pa |
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Vishay Siliconix |
High Current Inductors • Lowest molded height (3.0 mm) in this package footprint • Shielded construction • Frequency range up to 5.0 MHz • Lowest DCR/µH, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composit |
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Vishay Siliconix |
High Current Inductor • Lowest height (3.0mm) in this package footprint. • Shielded construction. • Frequency range up to 5.0MHz. • Lowest DCR/µH, in this package size. Manufactured under one or more of the following: US Patents; 6,198,375 / 6,204,744 / 6,449,829 / 6,460 |
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Vishay Siliconix |
High Current Inductor • Lowest height (3.0mm) in this package footprint. • Shielded construction. • Frequency range up to 5.0MHz. • Lowest DCR/µH, in this package size. Manufactured under one or more of the following: US Patents; 6,198,375 / 6,204,744 / 6,449,829 / 6,460 |
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Vishay Siliconix |
Commercial Inductors DESIGN SUPPORT TOOLS click logo to get started Models Available Design Tools Available STANDARD ELECTRICAL SPECIFICATIONS • Shielded construction • Excellent DC/DC energy storage up to 1 MHz to 2 MHz filter inductor applications up SRF (see “Sta |
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Vishay Siliconix |
High Current IHLP Inductor • • • • Shielded construction Frequency range up to 1.0 MHz Lowest DCR/µH, in this package size RoHS Handles high transient current spikes without COMPLIANT saturation • Ultra low buzz noise, due to composite construction • Excellent temperature stab |
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Vishay Siliconix |
High Current IHLP Inductor • • • • Shielded construction Frequency range up to 1.0 MHz Lowest DCR/µH, in this package size RoHS Handles high transient current spikes without COMPLIANT saturation • Ultra low buzz noise, due to composite construction • Excellent temperature stab |
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Vishay Siliconix |
High Current Inductor • • • • • • • • • • • • Shielded construction. Frequency range up to 5.0MHz. Lowest DCR/µH, in this package size. Handles high transient current spikes without saturation. Ultra low buzz noise, due to composite construction. 100% Lead (Pb)-free and R |
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Vishay Siliconix |
High Current Inductor • • • • • • • • • • • • Shielded construction. Frequency range up to 5.0MHz. Lowest DCR/µH, in this package size. Handles high transient current spikes without saturation. Ultra low buzz noise, due to composite construction. 100% Lead (Pb)-free and R |
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Vishay Siliconix |
Commercial Inductors |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPL |
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Vishay Siliconix |
Power MOSFET • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free Availabl |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Surface Mount (IRLR014, SiHLR014) • Straight Lead (IRLU014, SiHLU014) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Material categorization: For definitions |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Surface Mount (IRLR014, SiHLR014) • Straight Lead (IRLU014, SiHLU014) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Material categorization: For definitions |
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