| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET/ Low-Threshold D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits |
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Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET/ Low-Threshold D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits |
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Vishay Siliconix |
High Current Density Surface Mount Ultrafast Rectifiers • • • • • • • • Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 25ns 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Very low profile - typical height of 1.0mm For surface mount application Gl |
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Vishay Siliconix |
High Current Density Surface Mount Ultrafast Rectifiers • • • • • • • • Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 25ns 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Very low profile - typical height of 1.0mm For surface mount application Gl |
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Vishay Siliconix |
High Current Density Surface Mount Ultrafast Rectifiers • • • • • • • • Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 25ns 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Very low profile - typical height of 1.0mm For surface mount application Gl |
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Vishay Siliconix |
High Current Density Surface Mount Ultrafast Rectifiers • • • • • • • • Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 25ns 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Very low profile - typical height of 1.0mm For surface mount application Gl |
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Vishay Siliconix |
Complementary 20-V (D-S) Low-Threshold MOSFET rDS(on) (W) 0.280 @ VGS = 4.5 V 0.360 @ VGS = 2.5 V 0.450 @ VGS = 1.8 V 0.490 @ VGS = -4.5 V ID (A) 1.28 1.13 1.00 -1.00 -0.81 -0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching APPLICATIONS D Load Sw |
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Vishay Siliconix |
Complementary 20-V (D-S) Low-Threshold MOSFET rDS(on) (W) 0.280 @ VGS = 4.5 V 0.360 @ VGS = 2.5 V 0.450 @ VGS = 1.8 V 0.490 @ VGS = –4.5 V ID (A) 1.28 1.13 1.00 –1.00 –0.81 –0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package APPLICATIONS D |
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