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Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specif |
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Vishay Siliconix |
SUD50N024 ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Co |
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Vishay Siliconix |
SUB50N02-09 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-Side Synchronous Buck DC |
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Vishay Siliconix |
SUD50N025-05P D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion, Low-Side − Desktop PC − Notebook PC D GDS Top View Drain Connected to Tab Ordering Information: SUD50N025-05P—E3 (Lead (Pb)-Free) G S N-Channel MOSFET A |
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Vishay Siliconix |
N-Channel MOSFET ID (A)b 63b 52b rDS(on) (Ω) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU5 |
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Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS TO-251 • Primary Side Switch • Isolated DC/DC Converter D Drain Connected to Drain-Tab G D S G Top View Ordering Information: SUU50N10-18P-E3 (Lead (Pb) |
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Vishay Siliconix |
Ultrafast IGBT • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outli |
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Vishay Siliconix |
P-Channel MOSFET ID (A) 20 16 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-07 SUD50N03-07—E3 ( |
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Vishay Siliconix |
P-Channel MOSFET ID (A)b 84b 59b rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-252 |
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Vishay Siliconix |
P-Channel MOSFET ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Co |
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Vishay Siliconix |
N-Channel 60-V (D-S) 175C MOSFET / Logic Level PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.016 @ VGS = 10 V 0.022 @ VGS = 4.5 V ID (A) 50 43 D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D 12-V Automotive Systems − Load Switch − Motor Drive − DC/DC D TO-263 DRAIN co |
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Vishay Siliconix |
N-Channel MOSFET physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same num |
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Vishay Siliconix |
N-Channel MOSFET ww.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W 1 www.DataSheet4U.net SUU50N03-10P Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Sour |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET ID (A)a 17.5 14.5 rDS(on) (Ω) 0.012 @ VGS = 10 V 0.0175 @ VGS = 4.5 V APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU50N03- |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-Side Synchronous Buck DC |
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Vishay Siliconix |
P-Channel MOSFET • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D Drain Connected to Tab GDS Top View Ordering Information: SUD50N06-09L-E3 (Lead (Pb)-free) G S N- |
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Vishay Siliconix |
P-Channel MOSFET ation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed |
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Vishay Siliconix |
P-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D GD S Top View Drain Connected to Tab Ordering Information: SUD50N03-12P-E3 (Lead (PB) free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, |
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Vishay Siliconix |
P-Channel MOSFET 00 t v 10 sec Steady State Symbol RthJA RthJC RthJL Typical 17 50 2 4 Maximum 20 60 2.4 4.8 Unit _C/W _C/W 1 SUD50N03-11 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Vo |
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Vishay Siliconix |
P-Channel MOSFET , Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors Symbol RthJA RthJC Typical Maximum 30 1.8 Unit _C/W 1 SUD50N03-10 Sili |
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