| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
N-Channel MOSFET • Military Qualified • • • • • • • • • • • 3 D TO-205AD (TO-39) Low On-Resistence: 1.3 Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage |
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Vishay Siliconix |
N-Channel MOSFET • Military Qualified • Low On-Resistence: 3.6 • Low Threshold: 1.6 V • Low Input Capacitance: 35 pF • Fast Switching Speed: 6 ns • Low Input and Output Leakage BENEFITS • Guaranteed Reliability • Low Offset Voltage • Low-Voltage Operation • Easily |
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Vishay Siliconix |
N-Channel MOSFET • Military Qualified • • • • • • • • • • • 3 D TO-205AD (TO-39) Low On-Resistence: 1.3 Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage |
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Vishay Siliconix |
Power MOSFET • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dV/dt Capability |
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Vishay Siliconix |
N-Channel MOSFET • Military Qualified • • • • • • • • • • • 3 D TO-205AD (TO-39) Low On-Resistence: 1.3 Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage |
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Vishay Siliconix |
N-Channel MOSFET • Military Qualified • • • • • • • • • • • 3 D TO-205AD (TO-39) Low On-Resistence: 1.3 Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage |
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Vishay Siliconix |
(SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET • High E AR capability • Improved RON x Qg figure of merit (FOM) – 18.81 Ω-nC (SiHG22N60S-E3) - SiHP22N60S-E3, SiHF22N60S-E3, and SiHB22N60S-E3 also available – 15.12 Ω-nC (SiHG47N60S-E3) • Ultra-low RDS(on) • Ultra-low gate charge (Qg) • |
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Vishay Siliconix |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please se |
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Vishay Siliconix |
(SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET • High E AR capability • Improved RON x Qg figure of merit (FOM) – 18.81 Ω-nC (SiHG22N60S-E3) - SiHP22N60S-E3, SiHF22N60S-E3, and SiHB22N60S-E3 also available – 15.12 Ω-nC (SiHG47N60S-E3) • Ultra-low RDS(on) • Ultra-low gate charge (Qg) • |
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Vishay Siliconix |
E Series Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.c |
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