| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
Power MOSFET • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G G |
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Vishay Siliconix |
Power MOSFET • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Low RDS(on) • Lead (Pb)-free Ava |
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Vishay Siliconix |
Power MOSFET 600 0.385 • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gat |
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Vishay Siliconix |
Wirebondable Thin Film Chip Resistor Networks |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (W) 0.125 @ VGS = 10 V 0.150 @ VGS = 6 V ID (A) 16 14.6 D D D D TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching APPLICATIONS D Autom |
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Vishay Siliconix |
N-Channel MOSFET PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) 0.165 @ VGS = 10 V ID (A) 18 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive Such As: − Diesel Fuel Injection − High-Side Switch − |
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Vishay Siliconix |
Power MOSFET • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G G |
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Vishay Siliconix |
Power MOSFET • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G G |
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Vishay Siliconix |
Power MOSFET • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G G |
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