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Vishay Siliconix |
Bi-Directional N-Channel MOSFET PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.045 @ VGS = 4.5 V 20 0.048 @ VGS = 3.7 V 0.057 @ VGS = 2.5 V 0.072 @ VGS = 1.8 V IS1S2 (A) 5.0 4.8 4.4 3.9 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale |
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Vishay Intertechnology |
P-Channel MOSFET • TrenchFET® Power MOSFET • Ultra Small MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile COMPLIANT (0.62 mm) and On-Resistance Per Footprint Area RoHS APPLICATIONS • Low Threshold Load Switch for Portable Devices - Low Power Consumpt |
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Vishay Siliconix |
P-Channel MOSFET ID (A) −5.9 −5.0 rDS(on) (W) 0.054 @ VGS = −4.5 V 0.075 @ VGS = −2.5 V D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D D D D Load Switch B |
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Vishay Intertechnology |
P-Channel MOSFET • TrenchFET® power MOSFET • Ultra small 1 mm x 1 mm maximum outline • Ultra-thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switch • Battery switch • Charg |
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Vishay Intertechnology |
P-Channel MOSFET • TrenchFET® Power MOSFET APPLICATIONS • Portable Devices - Battery Management - Low Threshold Load Switch - Battery Protection S G 2 1 S 8451 XXX S S 3 6 G D D 4 5 Device Marking: 8451 xxx = Date/Lot Traceability Code D Ordering I |
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Vishay |
N-Channel MOSFET • TrenchFET® power MOSFET • Low-on resistance • Ultra-small 1.6 mm x 1.6 mm maximum outline • Ultra-thin 0.6 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Mobile comput |
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Vishay |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.059 at VGS = 4.5 V 20 0.061 at VGS = 3.7 V 0.065 at VGS = 2.5 V 0.085 at VGS = 1.8 V MICRO FOOT Bump Side View Backside View ID (A)a 3.2 3.1 3.0 2.7 Qg (Typ.) 6.3 nC • • • • • TrenchFET® Power MOSFET Sm |
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Vishay |
P-Channel MOSFET • Halogen-free according to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Ultra-Low Footprint Area Profile (0.62 mm) and On-Resistance • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable De |
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Vishay Siliconix |
Bi-Directional P-Channel MOSFET exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the sa |
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Vishay Siliconix |
Bi-Directional N-Channel MOSFET PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.024 @ VGS = 4.5 V 20 0.026 @ VGS = 3.7 V 0.034 @ VGS = 2.5 V 0.040 @ VGS = 1.8 V Bump Side View IS1S2 (A) 7 6.8 5.0 5.5 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOO |
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Vishay Intertechnology |
P-Channel MOSFET • TrenchFET® Power MOSFET APPLICATIONS RoHS COMPLIANT • Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life S G 2 1 S 8441 XXX S S 3 6 G D D 4 5 Device Marking: 8441 xxx = Date/Lot Tr |
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Vishay |
N-Channel MOSFET • TrenchFET® power MOSFET • Ultra small 1 mm x 1 mm maximum outline • Ultra-thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Baseband switch D • DC/DC convers |
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Vishay |
N-Channel MOSFET • TrenchFET® power MOSFET • Ultra small 1 mm x 1 mm maximum outline • Ultra-thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switch • Power management • Hi |
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Vishay |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.072 at VGS = 4.5 V 20 0.079 at VGS = 2.5 V 0.092 at VGS = 1.8 V 0.125 at VGS = 1.5 V MICRO FOOT Bump Side View Backside View ID (A)a 2.9 2.8 2.6 2.2 Qg (Typ.) 3 nC • • • • • TrenchFET® Power MOSFET Ultr |
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Vishay |
N-channel MOSFET • TrenchFET® power MOSFET • Small 2.4 mm x 1.6 mm outline • Thin 0.6 mm max. height • Typical ESD protection 5000 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Battery protection |
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Vishay |
P-Channel 20V (D-S) MOSFET • TrenchFET® power MOSFET • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switches and chargers switches • Battery manag |
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Vishay |
P-Channel MOSFET • TrenchFET® power MOSFET: 1.2 V rated • Ultra-small 1.6 mm x 1.6 mm maximum outline • Ultra-thin 0.6 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Low threshold load |
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Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • PA |
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Vishay Siliconix |
P-Channel MOSFET • TrenchFET® Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • PA |
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Vishay |
P-Channel 20 V (D-S) MOSFET • TrenchFET® Gen III p-channel power MOSFET • Compact 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • RDS(on) rating at VGS = -1.5 V • Typical ESD protection: 1900 V HBM • Material categorization: for definitions of compliance please see www |
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