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Vishay Siliconix |
N-Channel MOSFET retation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guarante |
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Vishay Siliconix |
N-Channel 30-V (D-S) 175C MOSFET etation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guarantee |
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Vishay Siliconix |
N-Channel 60-V (D-S) 200C MOSFET rDS(on) (W) ID (A) 110 a 0.0035 @ VGS = 10 V 0.005 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D TO-263 D Automotive – Boardnet 42-V EPS and ABS – Motor Drives D High Cu |
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Vishay Siliconix |
N-Channel 30-V (D-S) 175C MOSFET rDS(on) (W) ID (A)a 110a 0.0025 @ VGS = 10 V D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage APPLICATIONS D Automotive 12-V Boardnet TO-263 G DRAIN connected to TAB G D S S Orde |
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Vishay Siliconix |
SUM65N20-30 PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (W) 0.030 @ VGS = 10 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A) 65 a APPLICATIONS D Automotive – 42-V EPS and ABS – DC/DC Conversion – Motor Drives |
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Vishay |
N-Channel 40-V (D-S) MOSFET • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies D RoHS COMPLIANT G G DS Top View Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T |
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Vishay Siliconix |
N-Channel 75-V (D-S) 175C MOSFET etation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guarantee |
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Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • PWM Optimized for Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Isolated DC/DC Converters - Primary-Side Switch D GD S Top View SUM27 |
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Vishay Siliconix |
P-Channel 40-V (D-S) 175-LC MOSFET ID (A)d D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance rDS(on) (W) 0.0042 @ VGS = −10 V 0.0062 @ VGS = −4.5 V −110 −110 APPLICATIONS D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives S TO-263 G G D S Top Vie |
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Vishay |
N-Channel MOSFET pretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guarant |
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Vishay |
P-Channel MOSFET • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S GDS Top View Drain Connected to Tab Ordering Information: SUM110P08-11L-E3 (Lead (Pb)-free) G D P-Channel MOSFET ABSOLUTE MA |
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Vishay |
N-Channel MOSFET • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Power supplies: - Uninterruptible power sup |
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Vishay |
N-Channel MOSFET • TrenchFET® Power MOSFET • 175 °C Junction Temperature D G S N-Channel MOSFET Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous |
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Vishay |
N-Channel MOSFET • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power supply - Secondary synchronous rectificati |
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Vishay Siliconix |
P-Channel 60-V (D-S) 175 Degree Celcious MOSFET ID (A)d D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance rDS(on) (W) 0.0069 @ VGS = −10 V 0.0088 @ VGS = −4.5 V −110 −110 APPLICATIONS D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives S TO-263 G G D S Top Vie |
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Vishay Siliconix |
N-Channel 100-V (D-S) 200C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) 0.0095 @ VGS = 10 V ID (A) 110 a D D D D TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D D Automotive − 42-V Power Bus − DC/DC |
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Vishay Siliconix |
N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 75 D TrenchFETr Power MOSFET D New Low Thermal Resistance Package rDS(on) (W) ID (A) 110 APPLICATIONS D Automotive - Boardnet 42-V EPS and ABS - Motor Drives D High Current D DC/DC Converters 0.007 @ VGS = 10 V D TO- |
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Vishay Siliconix |
N-Channel 75-V (D-S) 200C MOSFET ation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed |
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Vishay Siliconix |
N-Channel 60-V (D-S) 175C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.006 ID (A) 110a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive Applications Such As: - ABS - EPS - Motor Drives D Industrial D TO-263 G G D S S N-Channel MOSFET |
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Vishay Siliconix |
N-Channel 40-V (D-S) 175C MOSFET etation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guarantee |
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