| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Vishay |
Dual N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Ordering Information: SiZF906DT-T1-GE3 (lead ( |
|
|
|
|
Vishay Siliconix |
Full Size Clock Oscillators TTL Compatible • 10TTL output load • 14 pin fill size • Industry standard • Wide frequency range The XO-53 series oscillator is TTL compatible and features fast rise/fall times with high reliability at low cost. The metal package with pin#7 case ground acts as shie |
|
|
|
|
Vishay |
Dual N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VG |
|
|
|
|
Vishay Siliconix |
Half Size Clock Oscillators Enable/Disable • Tri-state enable/disable The XO-523 series oscillator is half size, has Tri-state enable/disable controlled function, and is with a 3.3 V power supply voltage. The metal package with pin#4 case ground acts as shielding to minimize EMI radiation. |
|
|
|
|
Vishay |
Dual N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • G1 return/S1 pin for enhancing high side driving • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99 |
|
|
|
|
Vishay |
Dual N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • CPU core power N-Channel 1 MOS |
|
|
|
|
Vishay |
N-Channel MOSFET • PowerPAIR® optimizes high-side and low-side MOSFETs for synchronous buck converters • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO |
|
|
|
|
Vishay |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS VIN/D1 • Notebook System Power • POL GHS • 1 VIN 2 VIN 3 Low Current DC/ |
|
|
|
|
Vishay |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFETs and Schottky Diode • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • System Power - Notebook - Server • POL • Synchro |
|
|
|
|
Vishay |
Dual N-Channel MPSFET • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • CPU Core Power • Computer Peripherals • POL • Synchronous Buck Converter G1 N-Channel 1 |
|
|
|
|
Vishay |
Dual N-Channel MPSFET • TrenchFET® Gen IV Power MOSFETs • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1 • CPU Core Power • Computer/Server Peripherals • Synchronous Buck Converter |
|
|
|
|
Vishay |
Dual N-Channel MOSFET • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Integrated MOSFET half bridge power stage • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/do |
|
|
|
|
Vishay |
Symmetric Dual N-Channel MOSFET • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Symmetric dual N-channel • Flip chip technology optimal thermal design • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Material categorization: for definit |
|
|
|
|
Vishay |
Dual N-Channel MOSFET • TrenchFET® Gen V power MOSFET • Symmetric dual N-channel • Flip chip technology optimal thermal design • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for hi |
|
|
|
|
Vishay Siliconix |
Dual N-Channel MOSFET • PowerPAIR Optimizes High-Side and Low-Side MOSFETs for Synchronous Buck Converters • TrenchFET® Power Mosfets • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Comp |
|
|
|
|
Vishay |
Half Size Clock Oscillator Enable/Disable • • • • • • • • • Size: 8 pin half size Industry standard Tri-state enable/disable Wide frequency range Low cost Resistance weld package 5V Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition The XOSM-52 series |
|
|
|
|
Vishay |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) Channel-1 20 RDS(on) () 0.0068 at VGS = 10 V 0.0090 at VGS = 4.5 V 0.0033 at VGS = 10 V 0.0043 at VGS = 4.5 V ID (A) 16a 16a 35a 35a Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power M |
|
|
|
|
Vishay |
Dual N-Channel MOSFETs • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • CPU core power • Com |
|
|
|
|
Vishay |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • System Power - Notebook - Server • POL • Synchronous Buck Converter G1 D1 N-Channel |
|
|
|
|
Vishay |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • System Power - Notebook - Server • POL • Synchronous Buck Converter D1 G1 N-Channel |
|