| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
Power MOSFET • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage T |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991 |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vis |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120) • Straight Lead (IRFU9120, SiHFU9120) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPL |
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Vishay |
Power MOSFET • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated ( |
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Vishay Siliconix |
Power MOSFET 800 6.5 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com DESCRIPTION Third generation Power MOSFETs fro |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitve Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please se |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.c |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please se |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please see www |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please se |
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Vishay |
Power MOSFET • Low figure-of-merit Ron x Qg • 100 % avalanche tested • Gate charge improved Available • trr/Qrr improved • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information a |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Integrated Zener diode ESD protection • Material categorization: for defin |
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Vishay |
Power MOSFET • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) |
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Vishay |
MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.c |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please se |
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