| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET hysical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same numbe |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/ C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead t |
|
|
|
|
Vishay Siliconix |
Complementary MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Ultra Low RDS(on) and Excellent Power Handling In Compact Footprint • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching for Portable Devices 1206-8 |
|
|
|
|
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead termina |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET APPLICATIONS • Load Switches - Notebook PC 1206-8 ChipFET ® 1 D D D D S D D G D G Bottom View S N-Channel MOSFET Ordering Information: Si5440DC-T1-GE3 (Lead (Pb)-free and Hal |
|
|
|
|
Vishay |
N-Channel MOSFET • Halogen-free • TrenchFET® Power MOSFET RoHS APPLICATIONS COMPLIANT 1206-8 ChipFET® 1 D D D D S D D G • Load/Power Switching for Cell Phones and Pagers • PA Switch in Cellular Devices • Battery Operated Systems D Marking Code AH XXX G Lot Trac |
|
|
|
|
Vishay |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0100 at VGS = 4.5 V 20 0.0115 at VGS = 2.5 V 0.0135 at VGS = 1.8 V ID (A)a 25 25 25 16.6 nC Qg (Typ.) PowerPAK ChipFET Single 1 2 D D D D D D G S S • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® |
|
|
|
|
Vishay |
N-Channel MOSFET • Halogen-free • TrenchFET® Power MOSFET RoHS APPLICATIONS • Load Switches for Portable Devices COMPLIANT 1206-8 ChipFET TM 1 D D D D S D D G D G Bottom View S N-Channel MOSFET Ordering Information: Si5432DC-T1-GE3 (Lead (Pb)-free and Halog |
|
|
|
|
Vishay |
P-Channel 30-V (D-S) MOSFET • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested 1206-8 ChipFET® D 1 APPLICATIONS • DC/DC Converter - Load Switch - Adaptor Switch S DD D D S D G Bottom View Marking Code BQ XXX Lot Traceability and Date Code Part # Code G D O |
|
|
|
|
Vishay |
P-Channel MOSFET • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® ChipFET Package - Small Footprint Area - Low On-Resistance • 100 % Rg and UIS Tested • Typical ESD Protection: 5500 V (HBM) • Material categorization: For definitions of compliance please see |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET tate Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not pla |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated • Low Thermal Resistance 1206-8 ChipFET® 1 APPLICATIONS • Load/Power Switching for Cell Phones and Pagers • PA Switch in Cellular Devices • Battery Oper |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated 1206-8 ChipFET® 1 D D D D D D S G Bottom View Marking Code BB XX Lot Traceability and Date Code Part # Code Ordering Information: Si5443DC-T1-E3 |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/ C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET ® 1 D D D D D DG S 1.8 mm Marking Code BF XX Lot Traceability and Date Code Part # Code 3. |
|
|
|
|
Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Ultra Low Vf Schottky • Si5853DC Pin Compatible • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Charging Circuit in Portable Devices 1206-8 ChipFET® 1 A KA |
|
|
|
|
Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 D2 G2 Marking Code DA XX Lot Traceability and Date Code Bottom View Part # Code |
|
|
|
|
Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC S1 S2 G1 G2 Bottom View Ordering Information: Si5933DC-T1-E3 (Lead (Pb)-free) Si5933DC-T1-GE3 (Lead (Pb)-free and |
|
|
|
|
Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Low RDS(on) Dual and Excellent Power Handling in a Compact Footprint • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • Battery Switch |
|
|
|
|
Vishay Siliconix |
Dual P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC S1 S2 G1 G2 Bottom View Ordering Information: Si5975DC-T1-E3 (Lead (Pb)-free) Si5975DC-T1-GE3 (Lead (Pb)-free and |
|